Several companies have developed technologies for high voltage GaN”; generally specified at 600 V and perhaps as high as 800 V with suitable de-rating for SOA and the frequency of peak voltage application. These devices have had great success in off-line consumer products such as cellphone and notebook adapters, where size and weight are critical factors in the product value proposition. GaN is also found in appliances with high power needs such as refrigerators, and in consumer entertainment products – TVs – and personal computing systems. Designers appreciate GaN’s exceptional efficiency and robustness, and also the cost-benefit curve as the technology matures and displaces silicon MOSFETs. But for GaN to expand beyond consumer products and into higher power applications it must demonstrate that it can stand toe to toe with silicon carbide (SiC) in performance at industrial voltages. This presentation describes a 1700 V GaN HEMT device in the flyback application and compares it directly with a SiC equivalent, concluding with some insights into the future of both wide bandgap technologies.