Gallium Nitride (GaN) is one of the most important third generation semiconductor materials. Its wide bandgap makes it an excellent candidate for power electronics – GaN high electron mobility transistors (HEMTs) have already become well established in Specialty Technology applications such as consumer fast charging and are gaining traction in automotive. In addition, GaN and its compounds are gaining momentum across a wider range of applications, including µLEDs and RF power amplifiers.

Whilst the properties of GaN bring exciting benefits to these applications it also poses some unique processing challenges. Lam has led the advancement of process technologies for 200 mm GaN on Si fabrication for almost a decade and is also enabling the transition to 300 mm GaN on Si device manufacturing.

In this paper, we will discuss some critical challenges and solutions for GaN processing both, on 200mm and 300mm Si substrates.