• 10:50 – 11:10

A foundry perspective on Wide Bandgap semiconductors

Wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) semiconductors have emerged as crucial materials for advancing energy efficiency, particularly in the transportation sector. Beside integrated device manufacturers (IDM), foundries play an important role in the necessary upscaling of SiC and GaN manufacturing and in enabling access for fabless and fab-lite companies. The presentation will provide an overview of X-FAB as a leading foundry for automotive, industrial and medical applications and of the power electronics market from a foundry perspective, with specific focus on SiC and GaN. Beside the advantages of SiC and GaN for achieving power efficiency and and carbon neutrality goals, the presentation will also cover the challenges associated with integration SiC and GaN manufacturing into a CMOS manufacturing process. Finally, the presentation will conclude with an outlook of X-FAB’s technology- and manufacturing strategy for wide bandgap semiconductors.

Jörg Doblaski photo

Jörg Doblaski



As the Chief Technology Officer of the X-FAB foundry group, Jörg Doblaski is responsible for the development of X-FABs modular CMOS, SOI and WBG processes, targeting automotive, industrial and medical applications. Beside the development of the process technologies, this also includes design kit development, design enablement and customer support as well as prototyping. Jörg joined X-FAB in 2004 and served in different engineering- and engineering management positions before he became the group CTO in 2020. He holds a diploma degree in Electrical Engineering and Information Technology from Technical University of Ilmenau, Germany.

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X-FAB is one of the world’s leading specialty foundry groups for analog/mixed-signal semiconductor technologies with a clear focus on automotive, industrial, and medical applications. As a pure-play foundry, X-FAB provides manufacturing and design support services to customers that design analog/mixed-signal integrated circuits (ICs) and other semiconductor devices for use in their own products or the products of their customers. Its customers worldwide benefit from the highest quality standards, manufacturing excellence and innovative solutions by using X-FAB’s modular CMOS and SOI processes in geometries ranging from 1.0 µm to 110 nm, and its special micro-electro-mechanical systems (MEMS) processes. X-FAB is also the first pure-play foundry to provide comprehensive processing technologies for the wide-bandgap materials silicon carbide (SiC) and gallium nitride (GaN). The GaN-on-Si wafers are manufactured in its modern 8” fab in Dresden, Germany, and SiC wafers in the 6” fab in Lubbock, Texas, USA. X-FAB runs six production facilities in Germany, France, Malaysia and the U.S. The company employs about 4,200 people worldwide.

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