GaN technology is now rapidly penetrating power conversion markets across the power and voltage range. To become a mainstream power platform and exceed the market expectations of over $2 Billion by 2028, GaN and the customers adopting GaN in high volumes will demand and benefit by:
a) Robust, cost effective, easy to use high-performance GaN products
b) Ecosystem synergy with ICS – controllers/drivers and packaging
c) Scale – for operations and manufacturing.

With a clear role in the market in areas like infrastructure & computing, e-mobility and automotive, renewables & industrial, and the consumer space with unique solutions like bi-directional switch (BDS), not easily possible otherwise, GaN offers the highest performance among today’s power semiconductors. However, the true power of GaN is unleashed when it is integrated with other controllers and drivers as part of an overall surrounding ecosystem, including superior packaging.

We will review our robust normally off d-mode GaN FET, providing leading performance, robustness, versatility of use with its ability to capitalize on the inherent advantages of the GaN material that has allowed us to enable customer solutions from 30 Watts to 7.5 kilo Watts. With over 350 billion hours in the field uniquely encompassing both low power and high power our GaN is available in one of the widest package portfolios in GaN ranging from PQFNs to TO-leaded (not typically possible with competing GaN due to inherent weakness), to TO-leadless. Lastly, winning combinations enabled by bringing together high-performance controllers and drivers with our GaN will be discussed.

With in-house GaN technology via the acquisition of Transphorm, coupled with AC-DC ICs and more broadly one of the strongest micro-controller portfolios in the industry, Renesas can offer and reduce time to market for complete power solutions that save energy, reduce costs, and offer a one-stop solution for users.