- 09:40 – 10:00
Innoscience’s GaN Power Devices: Reliable, Price Competitive and Mass Manufactured
GaN power devices are revolutionizing the power semiconductor sector by enabling power conversion systems (AC/DC, DC/DC etc..) to be smaller, more efficient, simpler and thus cheaper than ones made with traditional silicon power devices. For example, to date Innoscience – the largest producer of 8-inch GaN-on-Si power devices wafers – has shipped more than 170M devices that are being used in numerous applications.
Yet, there are still several myths about GaN power devices. It is said they are very expensive and that their reliability is questionable. These myths have made several companies nervous about moving into GaN.
In this presentation, we will destroy these untruths by showing the performance and reliability of Innoscience’s GaN power device technology. We will also show that by leveraging the economies of scale delivered by the company’s two large 8-inch high-throughput manufacturing fabs totally dedicated to the production of 8-inch GaN-on-Si wafers (which each enable ~2x the number of devices per wafer than 6-inch processes), it is now possible to provide price-competitive GaN power devices. We will conclude the presentation by showing how to take advantage of discrete (InnoGaN™) and integrated (SolidGaNTM) Innoscience’s GaN power devices to enhance the performance of power converters.
Denis Marcon received a M.S. degree from the University of Padova in 2006. Subsequently, he received the degree of Doctor in Engineering (Ph. D.) from the Catholic University of Leuven and imec with the thesis entitled “Reliability study of power gallium nitride based transistors” in 2011. He is leading author or co-author of more than 50 journal papers or international conference contributions.
After his Ph.D. graduation, he has been leading projects aiming to develop GaN HEMTs for several applications (RF and power switching). Thereafter, he has joined the business development team of Imec where he was directly responsible for the partnerships with imec in the field of GaN power electronics as well as on dedicated development and manufacturing of Si-based devices, MEMS, sensors and micro-systems,
Today he is the General Manager of Innoscience Europe (subsidiary of Innoscience) and he is directly responsible for Innoscience’s GaN business in Europe.
Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with the support of international prestigious investors. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices and, in order to fulfill the rapidly growing power demands, Innoscience has inaugurated a new facility in September 2020. As a cutting-edge GaN technology provider, Innoscience’s 1,600+ employees and over 500 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including portable devices, mobile phones, chargers and adapters, electric vehicles (EV) and automotive. For more information, please visit www.innoscience.com.View Full Profile