16:35 – 16:45

Enabling Solutions for GaN Power Device Fabrication

Advanced power semiconductors and PMICs are key enabling technologies in automotive, consumer and wireless communications.

Third generation, wide bandgap semiconductors have already emerged as enabling materials for the fabrication of advanced power devices. GaN, for example, has huge potential both in discrete high electron mobility transistors (HEMTs) and monolithically integrated PMICs. However, GaN device fabrication poses some unique challenges, including ultra-low damage processing to improve device performance and reliability.

In this presentation, Lam will provide some examples of how we are partnering with our customers and research partners to continually innovate in this field, to offer market leading etch, deposition and clean solutions for advanced GaN power device manufacturing.

Annika Peter

Senior Technology Manager

Lam Research Corporation