The challenge in power electronics is the desire to achieve higher power throughput in smaller housings using less resources while increasing efficiency and reduce cost. As these targets have partially contradicting solutions, compromises need to be chosen. Typically, higher currents lead to higher thermal stress in a given device, thus reducing the life-time of the setup. To counter this drawback, solutions with lower losses can be considered like exchanging silicon-based IGBTs using wide band gap SiC-MOSFETs. However, the solution becomes more expensive in turn. Another obvious method would be improved cooling. Here, the approach with insulating substrates puts physical limits to the thermal transfer. The work presented focuses on a non-isolated approach with direct liquid cooling for power semiconductors.