• 11:00 – 11:35

MEMORY PANEL DISCUSSION

Moderator

Moderator TBC

Panelist

Dr. Sanjeev Aggarwal serves as a member of our Board of Directors and as President and Chief Executive Officer of Everspin. With over 25 years of expertise in the non-volatile memory and semiconductor industry, Sanjeev has been instrumental in shaping Everspin since its inception in 2008 through various leadership positions. Most recently, he served as the Chief Technology Officer driving product and technology roadmaps and business agreements with partners, vendors, and suppliers. As the Vice President of Technology R&D, he directed cross-functional teams to develop and qualify innovative technology and products. As Vice President of Operations, he managed manufacturing operations, supply chain, and managed joint development agreements for technology transfer and production. Before Everspin, Sanjeev was at Freescale Semiconductor and part of the team that spun out to form Everspin Technologies.

Prior to his work on MRAM, Sanjeev successfully developed and commercialized Ferroelectric memories at Texas Instruments. In 2005, he was awarded the Technical Excellence Award by the International Symposium on Integrated Ferroelectrics for his contributions to commercializing FRAM technology. Sanjeev is Senior Member, IEEE and his technical contributions include over 200 issued patents, more than 100 publications and numerous invited presentations. He graduated from Cornell University with a doctorate in Materials Science and Engineering and received his bachelors from Indian Institute of Technology, Varanasi in Ceramic Engineering.

Everspin Technologies, Inc. is the world’s leading provider of Magnetoresistive RAM (MRAM). Everspin MRAM delivers the industry’s most robust, highest performance non-volatile memory for industrial IoT, data center, automotive, aerospace and other mission-critical applications where data persistence is paramount. Headquartered in Chandler, Arizona, Everspin provides MRAM solutions to a large and diverse customer base. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads in the development of products based on perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. With its foundry partner, Everspin has achieved volume production of 300mm wafers down to the 22nm process node. Continued R&D investment in new, fast-growing applications such as use of STT-MRAM in AI inferencing and instant-on systems is creating new opportunity and establishing MRAM as a critical technology in the memory hierarchy.

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