High Voltage (HV) power semiconductors play a critical role in the mass commercialization of electrical vehicles. Silicon carbide (SiC) based MOSFET’s have become commonplace as a superior alternative to silicon devices in HV applications.

While this shift to SiC devices results in significant attention on wafer substrates, epitaxial layers, and front end technology, it also results in increased focus on backend packaging requirements. Silicon carbide devices run at a higher junction temperature compared to silicon devices, which drives unique packaging trends and roadmaps.

Wolfspeed is leading the transformation from silicon to silicon carbide (SiC), and best-in-class packaging materials, equipment, and processes are needed to unlock the full potential of silicon carbide devices.