• 11:55 – 12:45

Panel Session

Moderator
Tamara Baksht photo

Tamara Baksht

CEO

VisIC Technologies

Born and raised in Tomsk, Siberia, former USRR, Tamara is founding CEO of VisIC technologies a and one of the pioneers in GaN transistors technology. Tamara’s GaN expertise started from PhD study in Tel Aviv, Israel in 2001 for high power high frequency GaN transistors and continued through development and qualification of GaN technologies for power and RF applications.

Prior Tel Aviv’s PhD, Tamara earned degrees in Philosophy and Physics from Tomsk State University, and last 10 years she is leading the VisIC company to be the major player in power electronics for EV market.

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VisIC Technologies has a decade of experience in creating, developing, and advancing concepts based on cutting-edge Gallium Nitride-on-silicon technology. We develop solutions that help reduce energy waste in power conversion systems, with a focus on battery electric vehicles (BEV). Our patented D3GaN technology – Direct Drive D-mode GaN – addresses the automotive industry’s cost, supply, sustainability, reliability, quality, and performance needs.

With our D3GaN technology, BEV can save up to 50% on power losses over the driving cycle of the electric car, thus reducing battery cost and increasing driving range and performance. This solution also reduces the cooling system requirements and the size of the BEV inverter.

VisIC Technologies has produced the first GaN-based transistors used in automotive inverters. By utilizing the GaN on Silicon technology, we address the supply chain concern as we are using existing semiconductor high-volume production lines.

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Panelist
Carlos Castro photo

Carlos Castro

VP & GM Power GaN FETs

Nexperia

Carlos Castro serves as Vice President and General Manager GaN for Nexperia and has more than 15 years of experience in power and automotive semiconductors. Prior to joining Nexperia, Carlos led the IGBTs/MOSFETs/SiC discretes business and automotive electronics activities at Littelfuse. Earlier he was in charge of Marketing and Application Engineering for automotive MOSFETs and led the Technical Marketing group for Electric Drive Train at Infineon Technologies. He has been granted several patents for power semiconductor devices and has been author of multiple papers and conferences presentations. Carlos holds a MSc and a PhD in Electrical Engineering from the Technical University of Dortmund, Germany and the University of Granada, Spain.

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Headquartered in the Netherlands, Nexperia is a global semiconductor company with a rich European history and over 15,000 employees across Europe, Asia, and the United States. As a leading expert in the development and production of essential semiconductors, Nexperia’s components enable the basic functionality of virtually every electronic design in the world – from automotive and industrial to mobile and consumer applications.

The company serves a global customer base, shipping more than 100 billion products annually. These products are recognized as benchmarks in efficiency – in process, size, power, and performance. Nexperia’s commitment to innovation, efficiency and stringent industry requirements are evident in its extensive IP portfolio, its expanding product range, and its certification to IATF 16949, ISO 9001, ISO 14001 and ISO 45001 standards.

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Panelist
Allan Frediriks photo

Allan Frederiksen

VP Research & Development

Cambridge GaN Devices

Allan has a master’s degree in Electrical Engineering from Aalborg University focusing on system and algorithm development and realization.

Allan has spent more than 22 years in the semiconductor industry working in leading edge of mobile communications at Nokia, Renesas and Broadcom, security technology at NXP, depth sensing technology at ams AG, as technical leader, program manager, team leader and group leader. He has built and led 100+ person global multi-site, multi-cultural organizations over a decade. With his teams, he has delivered multiple highly complex technical products with lifetime volumes in the billions of units to customers.

With his extensive engineering leadership background and technology understanding combined with customer orientation and passion for product development, Allan joins CGD in the role of VP of Research and Development.

Allan has a master’s degree in Electrical Engineering from Aalborg University focusing on system and algorithm development and realization. Allan has spent more than 22 years in the semiconductor industry working in leading edge of mobile communications at Nokia, Renesas and Broadcom, security technology at NXP, depth sensing technology at ams AG, as technical leader, program manager, team leader and group leader. He has built and led 100+ person global multi-site, multi-cultural organizations over a decade. With his teams, he has delivered multiple highly complex technical products with lifetime volumes in the billions of units to customers.

With his extensive engineering leadership background and technology understanding combined with customer orientation and passion for product development, Allan joins CGD in the role of VP of Research and Development.

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A spin-out of the Cambridge University, Cambridge GaN Devices (CGD) is a fabless semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible.

Operating at a market worth exceeding $30 billion, CGD completed several funding rounds to develop and deliver to the market a wide range of products for consumer and industrial applications.

In autumn 2021, the company was named Tech Scaleup of the Year by Business Weekly in the category of green electronics and was awarded the UK Business Angels Association (UKBAA) deep tech Investment of the Year.

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Panelist
Aly Mashaly photo

Aly Mashaly

Director ATSC

ROHM Semiconductor

Aly Mashaly is the Director of ROHM’s European Application and Technical Solution Center (ATSC). He is an expert in power electronics, especially in automotive applications, and has worked for many years as a development engineer and project manager in the fields of e-mobility and aerospace applications. He is also a regular speaker at various conferences, including PCIM, ECPE, EPE and CS International.

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ROHM Semiconductor is a global company of 507.9 billion yen per March 31st. 2023, with over 23,700 employees. The company develops and manufactures a very large product range from SiC Diodes and MOSFETs, Analog ICs such as Gate Drivers and Power Management ICs to Power Transistors and Diodes to Passive Components. The production of our high performing products is taking place in state-of-the-art manufacturing plants in Japan, Germany, Korea, Malaysia, Thailand, the Philippines, and China. ROHM Semiconductor Europe has its Head Office near Dusseldorf serving the EMEA region (Europe, Middle East, and Africa).

For further information, please contact www.rohm.com

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+ Panelist from IQE to be confirmed