17:20 – 17:30

Preparing for GaN Device Manufacturing at 300mm

GaN is one of the most important third generation semiconductor materials. Its wide bandgap makes it an excellent candidate for high power electronics – GaN high electron mobility transistors (HEMTs) have already become well established in Specialty Technology applications such as consumer fast charging and are gaining traction in automotive.

Today, the most advanced GaN device manufacturing is performed on 200mm wafers. But the recent advances in 300mm GaN on Silicon MOCVD is ushering the next phase of GaN adoption at the larger wafer size. Of increasing interest, is the fabrication of low voltage GaN power electronics targeted at data center power management applications, as the rapidly emerging world of generative AI accelerates datacenter investment.

Lam has been a leader in Specialty Technologies, in the development of enabling process capabilities for 200mm GaN on Si fabrication, for almost a decade. In this paper, we will review the current status of these capabilities and discuss the challenges and opportunities for transitioning GaN from 200mm to 300mm production.

Michelle Bourke

Managing Director Specialty Technologies and Strategic Marketing

Lam Research Corporation