13:10 – 13:20

Revolutionizing Silicon Carbide Substrate Polishing via Environmentally-Conscious Slurry and Tool Designs

Standard SiC polishing processes employ aggressive, environmentally harmful redox chemistries containing potassium permanganate to achieve acceptable polishing outcomes. Polisher wear and tear caused by such an aggressive chemical remains a significant concern. Instead, we have chosen a two-pronged approach to improve SiC polish. Firstly, we have patented a hydrogen peroxide-based SiC slurry containing alumina nanoparticles and aspartic acid complexes for final polishing. The second approach utilizes a novel polisher that we have designed, are now manufacturing, and are selling worldwide. We call our invention CARE-TEC® or “CAtalyst-Referred Etching Technology”. The technology employs a polymeric pad onto which a catalytic platinum or ruthenium film is sputtered. With pH-adjusted water as the slurry substitute, an electric potential is applied to the SiC substrate and the pad. The principal mechanism of polishing SiC is the continuous etching of the substrate by catalytically converting the top layers of SiC into monolayers of silicon dioxide, which are then removed mechanically (via polishing) at moderate pressures.

Ara Philipossian, Ph.D.

Co-Founder, President and CEO

Araca