Photodiodes for the short wavelength infrared range enable enhanced vision and imaging in terms of distance, ruggedness against atmospheric disturbance, and chemical analysis compared to the visible. The penetration of these sensor, which today are mainly used in defense and machine vision applications, into other market segments such as automotive, consumer, and biomedical, are hampered by economic and technical limitations of the established technologies (scalability, complexity, spectral range). The concept of Si Schottky photodiodes for infrared detection was actively pursued in the 1980s and 1990s and recently resumed to tackle today’s challenges.

Fraunhofer IPMS will give insights into its silicon-based Schottky photodiode technology. We will also discuss the impact of device structure on the performance and its unique features as a compelling alternative for opening up new horizons on the SWIR roadmap. This talk is aimed at researchers, engineers, and decision-makers interested in exploring new alternatives to conventional photodiodes and seeking a reliable development partner to support their innovation efforts in SWIR applications.