• 08:30 – 08:50

Epitaxy: The lithography of GaN

The world’s need for more efficient power solutions together with Net Zero initiatives are driving development for GaN on silicon as a solution for voltage nodes up to 650 V. Building on market insertion for lower voltage applications (e.g., efficient USB-C chargers), fabless and specialty foundries are rapidly developing the technology for higher voltage commercial and automotive applications.

The successful development of viable GaN on silicon technology for these applications requires a paradigm shift for technology innovation. For over 50 years, most semiconductor innovation has focused on CMOS silicon where device design and fabrication have been the key enablers. In these instances, the starting materials, silicon wafers, have been a commodity and not an area of innovation and development. For GaN on silicon, this is no longer the case; the key enabler and differentiator is at the materials/epiwafer level. Advancing GaN on silicon requires fundamental materials engineering to address inherent strain and thermal challenges. Specifically, the enabling innovation is in the epitaxial engineering of the growth process, thus overcoming technological challenges at the materials level.

To demonstrate the shift in the innovation landscape, data for 650 e/d mode GaN on silicon HEMTs will be presented along with a roadmap to higher voltage nodes.

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Dr. Rodney Pelzel photo

Dr. Rodney Pelzel



Dr. Rodney Pelzel is the Chief Technology Officer at IQE, the leading supplier of compound semiconductor wafer products and advanced material solutions to the global semiconductor industry

Rodney has over 20 years of experience in the semiconductor industry, with deep expertise in semiconductor materials engineering and the epitaxial growth of compound semiconductors. Rodney joined IQE as a Production Engineer in 2000 and during his first twelve years at IQE he held various engineering and operational management roles focusing on scaling leading edge epitaxial technology for high volume manufacturing for wireless applications.

In 2012, Rodney was appointed as head of R&D for the IQE Group and was tasked with creating unique materials solutions that enable IQE’s customers and provided them with a competitive edge. Throughout his career, Rodney has been involved in numerous new product introductions, including IQE’s highly successful launch of 6” VCSELs for consumer applications.

Rodney is a chemical engineer by training and graduated from the University of Colorado in 1995 with a bachelor’s degree (high distinction) in Chemical Engineering and a PhD in Chemical Engineering (surface chemistry of semiconductors, GaAs and Si) from the University of California in 2000. He is a Chartered Engineer, Chartered Scientist, and a Fellow of the Institution of Chemical Engineers, with his work widely published and a co-inventor of 30+ patents.

IQE is the leading supplier of compound semiconductor wafer products and advanced material solutions to the global semiconductor industry that enable a diverse range of applications across mobile handsets, global telecoms infrastructure, smart connected devices, electric vehicles, infrared and sensing applications.

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