08:15 – 08:45

Registration

08:50 – 09:00

Welcome Address

Salah Nasri

CEO & Co-Founder

I.S.E.S.

09:05 – 09:25

Innovation in Power & Energy Management is Key to Support a Sustainable Future

In this presentation, Francesco Muggeri will talk about the global challenges on energy consumption and the importance of more efficient and energy savings in power & energy management in Automotive and Industrial to achieve a sustainable future. Electrification and Digitalization leads to the acceleration of silicon content pervasion in automotive and industrial market, Mr Muggeri will further discuss how new technologies like Silicon Carbide (SiC) and Gallium Nitride (GaN) contribute to better power efficiency and more intelligent solutions for energy usage.

Francesco Muggeri photo

Francesco Muggeri

VP Marketing & Applications, Power Discrete & Analog, China, STMicroelectronics

STMicroelectronics

09:30 – 09:50

Fu Lu Shou – The Three Lucky Stars of Power

In a world challenged by global warming decarbonization became the most pressing task for our generation. In the light of this power electronics and the underlying semiconductor technologies are an essential tool for survival. In this sense GaN, SiC and Si are the three lucky stars of power. While all three technologies are inevitable for our future, each has its distinct character and use case. Starting with a recap of properties and manufacturing aspects, global trends for use cases and markets will be covered. A special focus will be on technology fusion (e.g. Si’C) to tackle conflicting requirements in power electronics.

Mark Nils Münzer photo

Mark Nils Münzer

Distinguished Engineer Innovation & Emerging Technologies Automotive High Power

Infineon Technologies AG

09:55 – 10:15

How does SiC Accelerate NEVs

Nowadays, more and more electric vehicles hit the road, and this is helping the world to reduce its carbon footprint and fight against ever increasing greenhouse effect. The EVs can reuse multiple types of power sources in the shape of electric power. Nowadays, new EVs require higher charging speed, higher output power, higher efficiency, longer milage, and as well as more comfortable riding experience, which come along with new technical solutions and new demands for semiconductor power devices. New generation SiC devices have adopted more and more innovative structures and cooler packages, which enable the EVs to go farther, charge faster and work more economy. We believe with accelerated adoption of SiC-based solutions, we will make power efficiency for a cooler planet.

Markus Mosen photo

Markus Mosen

CEO

WeEn Semiconductors

10:20 – 11:00

Networking Break, Business Meeting

11:05 – 11:25

Virtual

Vehicle Electrification Catalyzing Power SiC Mass Commercialization

SiC brings compelling advantages to vehicle electrification including higher efficiency, fast charging, weight/volume reductions, and ultimately cost savings. Indeed, electric vehicle system insertion has emerged as the mass commercialization opportunity for SiC power semiconductors catalyzing their explosive growth. In this presentation, the fab models of the vibrant SiC manufacturing infrastructure will be introduced. In particular, the modest capital investments to manufacture SiC in mature fully depreciated fabs, alongside Si, leverage existing infrastructure and allow for SiC fabrication at Si economies of scale. Key barriers to SiC volume adoption will be identified and discussed. Finally, the impact of the US$150M PowerAmerica member-driven consortium in accelerating SiC and GaN power technologies will be summarized.

Victor Veliadis, Ph.D.

Executive Director & CTO

PowerAmerica

11:30 – 11:50

SiC – A Yin and Yang Perspective

Worldwide ramp-up of electromobility is resulting in a huge demand of wide bandgap semiconductor materials like silicon carbide. The hype for SiC is ongoing, the material allows higher efficiency in power conversion, but is currently at higher cost than conventional silicon-based technology. This presentation will focus on latest SiC innovations in material development, device structures and drivetrain concepts, and shows how, all put together, enables not only efficient, but most importantly affordable electrification. Efficient and affordable aspects need to get in balance like in Yin and Yang philosophy.

Ralf Bornefeld photo

Ralf Bornefeld

SVP Power Semiconductors & Modules

Bosch

11:55 – 12:15

Power Semiconductors Trends in eMobility from a Broader Power Electronics Perspective

The opportunities for WBG Power Semiconductors in automotive applications are recently widely discussed due to the immense growth potential of the new electric vehicle market. With the speed of market adoption, also the full supply chain needs to be developed.

This is not only the case within the semiconductor products supply from material – i.e. SiC epi substrates – to the chip and then to the module. It needs to be setup in the full industry value chain, from power generation via power transmission to the grid and charging infrastructure, then finally to the electric vehicle EV itself. This full industry value chain needs to be then differentiated depending on the final EV applications which have a wide variety of conditions to reflect: The volume driver is EV passenger cars, here already in a spread of technology requirements from high performance cars to standard models with less power needs. It becomes further differentiated, if we go up the EV types, e.g. in its intrinsic mass, from buses and trucks to electric locomotives.

The presentation will give an overview, how from a power electronics system provider view, the new power semiconductor technologies, i.e. SiC, drives the development of the new system concepts along the industry value chain applications due to the technological specific advantages of the new power semiconductor developments.

Rainer Kaesmaier, Ph.D.

Managing Director Semiconductors

Hitachi Energy Ltd.

12:20 – 13:25

Networking Lunch

13:30 – 13:50

Semiconductors and Sustainability – Why Going Green is Chip Driven

Julian Fieres photo

Julian Fieres

Vice President Transformation, Strategy, Sustainability & Digitalization

ZF Friedrichshafen AG

13:55 – 14:15

High Accuracy SPICE Model Faciliate Optimized Design of Power Electronics with SiC MOSFETS

An accurate SPICE model is important for power electronics RD designers to pick up the right topologies according to applications and to optimize the layouts and choose the right components. Characteristics of SiC MOSFET are difficult to modeling using conventional Si-based physics models, and current commercially available models are mostly not accurate here or there, which reduced the usefulness of simulation and increased the complexity for achieving optimized designs. We’ve developed a SPICE model which can be applied to both planar and trench SiC MOSFET with very high accuracy, which will enable engineers to reach their target in an more efficient way.

Cheng-Tyng Yen photo

Cheng-Tyng Yen

CEO

Fast SiC Semiconductor Inc.

14:20 – 14:40

How Silicon Carbide is Shifting the Future of EV – The Promise and Challenges

SiC materials and devices are rapidly gaining acceptance and being the game-changer in EV market future. The expected performance enhanced by SiC devices perfectly matches the need for the next generation of electrical vehicles, especially for the 800V EV platforms with high efficiency and high power density requirements.

However, a number of challenges must be addressed before SIC can be widely adopted and pursue its promises. Three major challenges, i.e., Manufacture Cost, Device and Packaging, and System Integration need to take care of, not alone by semiconductor manufacturers but together with up and down streams to collaborate.

Today, by gathering worldwide experts and players here, the presentation will focus on the market overview of SiC in automotive, promises and challenges, and how can we accelerate the adoption and breakthroughs.

Tong Wu, Ph.D.

Leader of Auto Marketing and Technical Team, Principal Expert, SiC Applications

onsemi

14:45 – 14:50

Electroless Metallization as Alternative Final Finish for Power Semiconductor Devices

In today’s world with its increasing demand in power semiconductor devices for electrification, e-mobility and enabling the flexible use of green energy it has become more and more imminent that it is not only necessary to involve new semiconductor materials (e.g. SiC, GaN) but also apply alternative manufacturing technologies to maintain the flexibility and reliability on the next generation of power semiconductor devices.

Electroless metallization processes from MKS are part of these alternative technologies for power semiconductor device manufacturing and have been established in the industry over past 10 years with their benefit of providing maskless metallization with higher throughput capability at a reduced Cost of Ownership compared to physical metallization techniques. We present these advantages on an example of an ENEPIG final finish that can be used as the basis for connecting the power semiconductor via wirebonding, soldering or sintering to the outside. The ENEPIG final finish can be obtained by using the Portfolio of MKS Electroless Metallization processes.

Dr. Stefan Pieper

Global Application Manager

mks | Atotech

14:55 – 15:35

Networking Break and Business Meeting

15:40 – 16:00

Power Electronics Integration and Modulization

Dr. KK Kuo photo

Dr. KK Kuo

VP R&D

ATX Semiconductor (Suzhou) Co., Ltd.

16:05 – 16:25

The Challenges in Getting a Reliable SiC Device

SiC power device is becoming crucial in new energy industry, especially in driving the BEV car to penetrate the market. However, comparing with Si devices, SiC devices are prevailing their applications, since making SiC devices reliable is still challenging. The reliability issues might arise from substrates, epi, processing, assembly, even the final test and application. In this presentation, the defects from different processing stages are sampled, and their impacts on device reliability are outlined. It can be seen that effective tools and more reliable data are needed for screening those flawed devices. In YASC, we are introducing new tools, accumulating data, and know-how to make the SiC device reliable and robust.

Dr. Hongchao Liu photo

Dr. Hongchao Liu 刘红超

SVP/Chief Scientist

Anhui YOFC Advanced Semiconductor Co. Ltd (YASC)

16:30 – 16:50

GaN HEMT for Electric Car Inverter: Breakthroughs and Challenges

The mobility industry is living through the most dramatic changes since the invention of the internal combustion engine and the standardization of the manufacturing process. Society and governments are looking for zero-emission transport, while car makers are seeking the most efficient way to manufacture low-cost and long-distance electric cars. In this context, inverter efficiency became the critical performance parameter, and semiconductors with low loss switching energy, such as SiC and GaN are getting into the spotlight. In this keynote the successful development of a three- phase GaN-based inverter reference design with 400V bus voltage and 400ARMS current is discussed and the results are presented. The major steps on the way from semiconductor chip design, through module development and to full current inverter operation are discussed, chosen solutions explained and results are presented. The main challenges include robust high current > 100A GaN die, with low parametric shift because of repetitive unclamped switching tests up to 1600V; driving 4 dies in parallel to obtain equal current sharing, smooth waveform at needed current and obtaining low voltage overshoots on the gate and on the drain.

Jim Jian photo

Jim Jian

VP Sales APAC and NA

VisIC Technologies

16:55 – 17:35

How Chinese local makers get ready to power the EV market?

Dr. Hongchao Liu photo

Moderator

Dr. Hongchao Liu 刘红超

SVP/Chief Scientist

Anhui YOFC Advanced Semiconductor Co. Ltd (YASC)

Cheng-Tyng Yen photo

Panelist

Cheng-Tyng Yen

CEO

Fast SiC Semiconductor Inc.

Jiemin Cao photo

Panelist

Jiemin Cao 曹杰敏

VP 副总裁

Hangzhou Silan Microelectronics Co., Ltd.

Dr. Hongliang Shi photo

Panelist

Dr. Hongliang Shi

Silicon Carbide Application Director

Hunan Sanan Semiconductor Co., Ltd.

17:40 – 17:50

Closing Remarks and Lucky Draw

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