07:30 – 08:30

Registration

08:45 – 09:00

Welcome Speech

Salah Nasri

CEO & Co-Founder

I.S.E.S.

STRENGTHENING EUROPE’S STRENGTHS & TECHNOLOGICAL LEADERSHIP

09:05 – 09:25

Virtual

Opening Address

Lucilla Sioli photo

Lucilla Sioli

Director Artificial Intelligence and Digital Industry

EU Commission

09:25 – 09:45

Keynote

The European Chips Act. A Framework for Revitalizing the European Semiconductor Ecosystem

The worldwide demand for chips grows rapidly and is expected to double by 2030. Europe must ensure its security of supply within the global industrial value chain. The EU Chips Act aims to build on Europe’s strengths and address outstanding weaknesses. It will mobilise more than € 43 billion of public and private investments to strengthen the semiconductor ecosystem, production capacities and resilient supply chains. And finally, it will set measures to prepare and respond to future supply chain disruptions, together with EU Member States and our international partners. With this Europe is laying the foundations for technologies that are not yet available there today. Research and technology organizations play a strong role as partnerships with like-minded partners do. And besides all this, one of the most important factors is the sufficient availability and training of skilled workers.

Dr. Thomas Morgenstern photo

Dr. Thomas Morgenstern

EVP Frontend IFAG FE

Infineon Technologies AG

ENABLING AN ELECTRIFIED & ENERGY EFFICIENT FUTURE

09:45 – 10:05

Future of SiC Power Modules in Automotive and Industrial Applications

The power electronics world is developing from utilizing Si devices towards SiC devices. Power density is one of the key factors in power electronics and with the right packaging technologies, great advantages can be obtained benefitting the system level significantly. Claus Petersen will touch on the importance of SiC, and the growing adaptation of SiC in Automotive applications as well as in industrial and renewable applications. In addition he will focus on packaging technologies to leverage SiC devices to its maximum potential.

Claus A Petersen photo

Claus A Petersen

President

Semikron Danfoss

10:05 – 11:05

Networking Break and Business Meetings

11:05 – 11:25

Volkswagen Group – Power Electronics In-House Development

Volkswagen Group Components with its more than 70.000 employees in over 60 factories worldwide is one of the biggest Tier 1 suppliers in the world – a hidden gem under the roof of the Volkswagen Group. With our dedication to developing the key parts of power electronics in-house – down to the level of semiconductor specification – we will enhance our product portfolio, change supply chains sustainably and disrupt automotive electronics’ products and processes.

This keynote will give an insight into the future journey of Volkswagen Group Components by outlining the technical approach of our next generation inverter platform. The motivation behind the increased development depth will be highlighted and the importance of strong and new ways of collaboration between all players in the automotive value chain will be shown. We create future mobility – for generations to come.

Alexander Krick photo

Alexander Krick

EVP Technical Development

Volkswagen Group Components

11:25 – 11:45

Innovative Traction Drives with SiC Semiconductors

ŠKODA ELECTRIC is a renowned supplier of traction equipment for the SKODA Group and other important finalists of rail vehicles. For many electrical equipment applications, we use HV IGBT 6.5 kV/1000A transistors in large quantities (EMU trains ). In 2016, we built the first sample of a 200 kW SiC traction inverter. In 2019, we tested a traction drive for a new metro train for 1500V DC system and HV SiC technology (3.3 kV/ 750A) with a new IPMSM traction motor with natural cooling. The goal of the modern drive was to increase the reliability and reduce the maintenance of the traction drive, to reduce the weight and above all, due to the high efficiency of the traction drive, to reduce the electricity consumption of the train. The type tests of the train confirmed all these expectations.

The use of SiC technology leads to fantastic results in the field of electromobility, but it must also be combined with other modern elements of the traction drive. An example is the new ŠKODA ELECTRIC traction drive with a 5-phase IPMSM motor with third harmonic injection and a SiC inverter with a weight of 14.5 kg and a maximum power of 600 kW. Based on an objective measurement, this drive brings an electrical energy saving of 27.1% compared to an IGBT inverter and an asynchronous traction motor.

Dr. Ladislav Sobotka photo

Dr. Ladislav Sobotka

Engineering and R&D Director

Skoda Electric

11:45 – 12:05

Partnership as a Foundation for Decarbonization

Volvo Group is on a transformation journey with an ambitious decarbonization roadmap. Being a pioneer in electrification and with clear net-zero targets, it is important to transform the whole ecosystem together with a holistic view. While seizing this once in a lifetime opportunity, we make sure that we continue to provide best-in-class products that let our customers reach that extra mile. Power semiconductors such as SiC and GaN are essential foundational building blocks that let us stay ahead and keep our innovation values. As we always say, our suppliers are our business partners, and we firmly believe that partnership is the new leadership. In this journey, we want to work together with our Tier-1s and semiconductor companies as key partners in developing these leading-edge technologies.

Vishnu Kumaresan​, Ph.D logo

Vishnu Kumaresan​, Ph.D

Semiconductor Business Specialist & Segment Leader

Volvo Group

ENHANCHING RELIABILITY, QUALITY & PERFORMANCE

12:05 – 12:25

Business Benefits Of SmartSiC™: Unrivaled Technology For Sic In Automotive

For 30 years, Soitec has been designing and manufacturing semiconductor engineered substrates. Soitec is addressing markets for three key megatrends such as 5G/6G, Electrical Vehicles (EVs) and Artificial Intelligence. We foresee EVs to become a significant new growth driver by capturing the two main trends in this market: the Digitalization of the car, and the Electrification of mobility.

By 2030, more than 45 million of cars sold will be EVs. Thanks to its performances, by 2025 it is expected that more than 50% of EVs will use Silicon Carbide (SiC) in their power electronics systems. Silicon Carbide brings several advantages over silicon when it comes to power electronic devices. These include a higher breakdown voltage, higher operating temperature, and higher thermal conductivity that helped imposing SiC as preferred option for inverter for leading EVs. Although amazing progress has been demonstrated past 15 years regarding silicon carbide substrate properties and processing, major limitations remain for a straightforward transition to large volume.

Smart-Cut™ applied to SiC, generating SmartSiC™ engineered substrates aims to accelerate silicon carbide adoption and brings best of SiC by combining high conductivity ultra-flat pSiC and high quality layer of mSiC for device.

Performance wise, this unique vertical structure allows a boost in electrical performance and efficiency of power devices such as MOSFETs and diodes. It brings as well flatness and process simplifications advantages that will be discussed.

On sustainability front, SmartSiC™ is a greener route to volume by targeting CO2 footprint equivalent to silicon wafers, mostly thru vast reuse of donor wafers, obtained at very high thermal budget, for more than 10 SmartSiC wafers for each donor.

This route is also lowering risk lowering capex intensity and speeding 200mm SiC wafers introduction by two years.

All these performances had been demonstrated for manufacturing and triggered the decision for a new fab in Soitec with first production in September 2023. .

The presentation will describe the SmartSiC process and latest results on wafers and devices and how SmartSiC™ is enabling major impacts on SiC business

Ph.D. Emmanuel Sabonnadière photo

Ph.D. Emmanuel Sabonnadière

VP Division Automotive & Industrial

Soitec

12:25 – 12:45

Process Control Trends for WBG Power Devices

The automotive industry is continuing its secular shift towards more electrification, computing, and automation.

Consequently, both the number of semiconductors used in automotive, and their complexity are rapidly growing to support new applications. The very high standards for automotive reliability are requiring the adoption of advanced process control and inline screening methodologies.

An additional challenge in automotive electronics is the introduction of wide bandgap (WBG) materials, like silicon carbide (SiC) or gallium nitride (GaN), which are essential to the proliferation of electric vehicles because of their improved power efficiency over silicon.

I will start my presentation by outlining the yield challenges that WBG power manufacturers face while ramping production to meet industry’s skyrocketing demand. Low yield is impacting both fabrication costs and product reliability and can pose a serious threat to the EV adoption in the market.

A high amount of manufacturing costs and yield loss comes from the substrate and epitaxy processes, even before device fabrication starts, so process control for these initial steps is very critical and requires specialized inspection and metrology tools.

During the device fabrication, new processes are introduced, like SiC trench etch, which requires innovative process optimization as well as advanced metrology capability.

Moreover, the adoption of Inline Part Average Testing (I-PAT®), which has already been introduced on silicon-based automotive chips, is expected to increase during SiC device manufacturing to mitigate reliability concerns derived from low yield and substrate immaturity.

Finally, new wafer singulation, such as plasma dicing, and bare die inspection will be needed to limit the occurrence of edge die cracks and delamination issues caused by the current mechanical and/or laser dicing technologies.

Keywords: Electrification, Yield, Reliability, Inline Screening, Silicon Carbide

Oreste Donzella photo

Oreste Donzella

Executive Vice President and Chief Strategy Officer

KLA

12:45 – 14:00

Buffet Lunch

14:00 – 14:20

The Role of Extrinsic (Early Life) Failures and Stabilization Stress and Burn-In During the Production of Silicon Carbide and Gallium Nitride Power Semiconductors

Gayn Erickson, CEO of Aehr Test Systems, to discuss the need to identify early “infant mortality” failures and the importance of Stabilization Stress and Burn-In during the production of Wide Bandgap (WBG) Semiconductors. Areas of focus will include what types of stress and burn-in conditions are used to accelerate extrinsic / early life failures and to stabilize threshold voltages of high power silicon carbide MOSFETs and why this is needed. Mr. Erickson will also discuss the impact of the transition from single die Packages to multi-die modules on the test and burn in production flows and equipment.

Gayn Erickson photo

Gayn Erickson

President & CEO

Aehr Test Systems

14:20 – 15:00

Risk and Challenges With Capacity Investments & Supply Chain Resiliency

Ralf Bornefeld photo

Moderator

Ralf Bornefeld

SVP Power Semiconductors & Modules

Bosch

Panelist

onsemi

Jianwei Dong photo

Panelist

Jianwei Dong

CEO

SK Siltron CSS

Roman Strasser photo

Panelist

Roman Strasser

VP, Head of Technical Development VW Group Inverter Platform

Volkswagen Group Components

15:00 – 16:00

Networking Break, Business Meetings and Refreshments

EQUIPMENT & MATERIAL SUPPLIER SESSION

16:00 – 16:10

How Laser is Enabling The Power Semiconductor Roadmap

To keep up with the drive for improved electrical performance of Power Semiconductor devices, chip designers are looking at thinner wafers and moving from Si to SiC and GaN wafer substrates. Due to the increased electrification in our daily life we see a strong increase in power semiconductor applications for mobile, automotive, industrial, renewable energies, etc. As a result of this increase in volume, the market is looking at new wafer singulation technologies to keep up with the technology requirements as well as the cost. ASMPT developed a patented Ultra-Violet (UV) nano second laser dicing technology for thin SiC wafers (100 – 150 μm), which allows customers to continue their technology roadmap and which is competitive from a Cost of Ownership (CoO) to the conventional saw blade dicing technology. Blade dicing is encountering yield issues and due to the hardness of SiC, high consumable cost and low throughput. During our presentation at ISES EU Power 2023 we will share the laser technology concept used and the results achieved for dicing of thin SiC power semiconductor devices including reliability data and CoO.

Key words: SiC, Dicing, Power Semiconductors, Thin Wafer, Multiple Beam

Jeroen van Borkulo photo

Jeroen van Borkulo

Head of Business & Marketing

ASMPT Limited

16:10 – 16:20

Intrinsic Reliability and Product Qualification Testing in GaN Power Semiconductors Do One the Other or Both?

The development of new technologies, such as GaN, have created the opportunity for more efficient and higher voltage/power performance in switching and power management circuits. GaN has high cutoff frequencies, low on-state resistance, and high breakdown voltages, enabling increased power handling densities for applications from 100 to >600 volts.

Assessment of material and processes used in device fabrication is a key aspect for fielding reliable product to the market. Process changes for cost and performance improvements must be vetted for reliability performance variance.

Reliability testing of switching power devices requires the balance of several competing challenges. The first is to understand the intrinsic reliability of the fabricated device. In order to quickly assess this, a “soft-switching” methodology may be useful.

Product or sub-system qualification, including extrinsic effects, is needed under application conditions. Assessment of product quality for application specific use is typically done using “hard-switching” tests to close approximation of the application.

The challenge for the device manufacturer is defining and implementing the reliability and qualification test regime that is both cost effective but industry applicable to the standards required. Where are we at in the journey to find a reliable and qualified part?

Roland Shaw photo

Roland Shaw

President of Accel-RF

STAr Technologies

16:20 – 16:30

Addressing Testing Challenges for Power Modules and Three-Level Inverters

The use of renewable energy sources is one of the key issues when it comes to developing the next-generation worldwide energy supply. The need for improvements in efficiency and reliability is leading to the increasing diffusion of three-level IGBT inverters: featuring smaller output voltage steps than two-level topologies, they provide a cleaner output waveform, resulting in a more effective switching frequency. Because the IGBTs are subjected to a lower bus voltage, lower-voltage modules can be used. For this reason, three-level topologies are being widely used in various applications requiring high voltages, including photovoltaics and wind power inverters. Compared to the equivalent two-level modules, these products pose some specific challenges in regard to their production testing. In particular, they require to operate with multiple programmable and independent drivers to condition each section of the module under test properly, in order to measure all the working parameters. In addition to that, special attention must be paid to the design of a signal path with minimal stray inductance, in order to minimize voltage overshoots during signal commutation. These, and many other technological challenges, have been faced and solved by SPEA over the past 45 years. The DOT800T test platform represents the state-of-the-art equipment that has made SPEA a global leader in testing power products.

Elia Petrogalli photo

Elia Petrogalli

Sales Manager Semi & MEMS Business Unit

SPEA

16:30 – 16:35

Meeting Challenges in Power Device Fabrication with Advanced Metrology and Inspection

Today, power devices span multiple device architecture types, are produced on a variety of wafer sizes, and leverage multiple material sets including Silicon, Silicon Carbide and Gallium Nitride, to name a few currently mainstream materials. With increasing device power ranges, breakdown voltages, switching speeds and drive currents not only does the manufacture of this class of devices become more complex but the accuracy with which each processing step is conducted plays a vital role in ensuring the performance metrics are met, further ensuring overall device reliability and lifetime. This brief overview presentation will highlight a few of the challenges faced by device manufacturers during the production of silicon based super-junction MOSFETs, Silicon Carbide MOSFETs and finally Gallium Nitride HEMT (High Electron Mobility Transistors). In doing so, optical and infra-red critical dimension (O/IRCD) metrology and acoustic metrology technologies will be presented in the context of HVPs presented in the high-volume manufacture of these power devices.

Dr. Vamsi Velidandla photo

Dr. Vamsi Velidandla

Senior Director, Product Management

Onto Innovation

16:35 – 16:40

Enabling Solutions For Advanced Power Device Fabrication

Advanced power semiconductors and PMICs are key enabling technologies in automotive, consumer and wireless communications.

Si power semiconductors continue to evolve and are becoming increasingly sophisticated in order to deliver performance improvements. These trends are also driving the need for more advanced high volume manufacturing solutions. 300mm production, ultra-thin wafer processing, higher density device architecture and more complex vertical trench designs all pose new challenges from a fabrication perspective. At the same time, new generations of wide bandgap power devices that complement established Si based technologies are increasingly being deployed.

Lam is partnering with our customers and research partners to continually innovate in these fields in order to offer market leading etch, deposition and clean solutions for advanced and next generation power device manufacturing.

Dr. Anna Battaglia photo

Dr. Anna Battaglia

Technology Manager

Lam Research Corporation

16:40 – 16:45

Electroless Metallization as Alternative Final Finish for Power Semiconductor Devices

Dr. Christian Ohde photo

Dr. Christian Ohde

Global Product Director SC/FEC

mks | Atotech

16:45 – 16:50

Customized Silicon and SOI Wafers Enabling Enhanced Power Devices

Advanced silicon wafers can greatly improve power device performance and reduce power losses.

Bonded Silicon-On-Insulator (SOI) wafer is a cost-effective substrate choice for power management devices since its inherent isolation capability pushes towards monolithic integration reducing the die size. The device and buried oxide layer specification flexibility helps establish high freedom of design to streamline the chip development process.

Fully customizable gallium nitride (GaN) silicon substrate wafers with advanced stress management provide an enhanced platform for up to 1200 V lateral GaN power devices. All parameters including wafer thickness, crystal orientation and oxygen levels can be customized to enhance customer’s GaN epitaxy process efficiency and end product capability. Further benefits can be gained through GaN growth on SOI wafers. The layered structure of the SOI substrate enables monolithic integration increasing device performance and power efficiency, reduces dislocations and allows the use of thinner buffer layers.

Dr. Atte Haapalinna photo

Dr. Atte Haapalinna

CTO

Okmetic Oy

16:50 – 16:55

TEL: Moving Into the MAGIC Era of Semiconductors

Neil Armstrong photo

Neil Armstrong

Director Sales Development

Tokyo Electron

16:55 – 17:00

Thin Film Solutions for Wide Bang Gap (WBG) Power Devices

Recently, there has been a big demand for power semiconductors due to latest macroeconomic technology trends like electrification (EVs) and carbon footprint reduction (clean source of energy). Among the available power semiconductors materials, there is a strong interest towards wide bandgap semiconductors (WBG) like silicon carbide (SiC) and gallium nitride (GaN) in various applications due to their inherent material properties. There are several benefits for wide bandgap materials over traditional Si devices in terms of better electrical & thermal performance, and compactness. Device makers have come up with novel device structures to maximize the benefit out of these materials and reduce the fabrication costs, thereby demanding more rigorous processing capabilities. Thin film deposition is a key element in the value chain of WBG power device fabrication.

As a leading thin film powerhouse, Evatec offers several thin film solutions for this purpose like a.) Ohmic contact (backside & frontside) and Schottky contact formation, b.) frontside protection, c.) thin wafer handling, and d). trench filling. We offer solution using amorphous carbon layers for protection on the frontside surface to withstand high thermal budget during implant activation in silicon carbide devices. Our systems include necessary hardware solutions to handle thin wafers (robot handlers, chuck etc.,) used by several WBG power device makers. In addition, we also offer enhanced solutions to cover the frontside with thin barrier and thick aluminum layers, generally required in devices with high topography to achieve planar surface on power devices.

Dr. Vinoth Sundaramoorthy photo

Dr. Vinoth Sundaramoorthy

Product Marketing Manager

Evatec

17:00 – 17:05

Empowering Power Electronics Packaging Through Photonic Debonding

PulseForge’s cutting-edge photonic debonding solution is spearheading the advancements in the power electronics packaging industry. Leveraging high-intensity light pulses, from sophisticated flash lamps, in conjunction with an ingenious reusable inorganic light absorber layer, our state-of-the-art technology presents exceptional opportunities for lowering processing costs while effectively debonding materials crucial for wafer thinning, RDL build, Fan-out, and substrate transfer.

In this presentation focused on Power MOSFETs packaging, we will delve into the intricacies of our photonic debonding process, demonstrating its ability to overcome traditional debonding method limitations and cost-effectively facilitate the detachment of temporarily bonded wafers from glass carriers. By exploiting broadband light spanning a wide spectrum (200 nm – 1100 nm) with intense pulses reaching up to 45 kW/cm2 over micro-second intervals, the photonic debonding process delivers unmatched efficiency and reliability, showcasing successful debonding of thinned wafers (<100 µm) from glass carriers.

Beyond the captivating results of our Power MOSFETs processing study, we will delve into the intricacies of cost savings afforded by our photonic debonding method. With large area illumination capabilities (75 mm x 150 mm) per flashlamp, the photonic debonding approach exhibits a high-throughput and clean solution, further driving down costs, and encouraging on-shoring of back-end processes.

Vikram Turkani

Director, Technology Partnerships and Strategic Business Development

PulseForge

17:05 – 17:10

The EDA breakthrough solution for SiC and GaN Front-End and Back-End

The growth of WBG semiconductor Market (i.e., Silicon Carbide, Gallium Nitride) has placed challenging demands on traditional burn-in and test systems, mainly due to failure mechanisms related to these new technologies.

In this context, EDA Industries has used the experience gained in the WBG Back-End environment, extending the same approach also to Front-End. The result is a unique test platform for both environments, strengthened by innovative development and data analysis software tools and by the introduction of advanced automation processes. This is a key to mix and correlate production results and data, allowing quick feedback to chip makers for product and process improvement.

This results in an overall yield and quality enhancement and, as a consequence, in a dramatic reduction of the devices’ costs.

Luca Lillacci photo

Luca Lillacci

General Manager

EDA Industries S.p.a

17:10 – 17:20

SiC / IGBT Power Module Assembly & Test Equipment Solutions

With over 30 years of extensive experience and proficient skills in providing standard and customized automation solutions, Pentamaster serves customers across various industries sector ranging from semiconductor (consumer electronics, automotive), optics & photonics sensor, MEMS sensor, medical devices, food & beverages to general manufacturing. Over the years, Pentamaster had expanded its global footprint and market share to California, USA / Munich, Germany / Suzhou, China and Yokohama, Japan.

Since 2010, Pentamaster has been providing automated test equipment solutions for power modules used in home appliances. In 2018, Pentamaster expanded its range of equipment solutions to cover power module electrical burn-in, assembly and final test solutions for the EV industry. With their vast experience and engineering technology, Pentamaster is currently serving most of the key power module manufacturers across the globe

Michael Koelbl photo

Michael Koelbl

General Manager Pentamaster Automation Germany GmbH

Pentamaster Technology

17:20 – 17:30

Total Solution of Process Kits to Enabling an Efficient Supply Chain in FAB

A faster and more reliable semiconductor equipment chamber process kits resource including spare parts and refurbishment solutions from concept to mass production is demonstrated as a critical competition strength to meet the booming demands of even larger wafer fabrication capacities. The booming markets with diversified application scenarios for AI, EV and power devices simultaneously request a flexible supply chain to support process technology changing and evolving. One-stop solution of chamber process kits from TESSVIDA is focusing on integrating the technology strengths of different partners and helping all product engineers or commodity specialists from equipment makers to approve the right plan of components or modules effectively from materials, functions to structure and applications, and helping all equipment owners and supply chain experts to maintain the fab operation at a reliable and competitive status.

Jimmy Tao photo

Jimmy Tao

Marketing Director

Tessvida

17:30 – 17:45

Closing Address

18:00 – 21:00

Cocktail Reception & Gala Dinner

• Dinner Sponsor Welcome: Invest in Pomerania – Wojciech Tyborowski, Director
• The Dr. John Palmour Excellency Award
• Advisory Board Awards
• Entertainment
Wojciech Tyborowski photo

Wojciech Tyborowski

Director

Invest in Pomerania

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