Webinar Topic

ISES Memory Manufacturing Live Webinar

  • March 30, 2021
  • 2 hours
  • 8:00 AM PST

ISES Memory Manufacturing Recorded Session

  • March 31, 2021
  • 2 hours
  • 18:00 PM CST

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Webinar Agenda

Smart Manufacturing
Presented by: Koen De Backer, VP of Smart Manufacturing and AI – Micron
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Magnetic Random Access Memory Technology and Applications
Presented by: Mustafa Pinabasi, CTO, SVP Magnetics Technology – Spin Memory
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Memory Technologies and Market Trends
Presented by: Simone Bertolazzi, Sr Technology and Market Analyst, Memory – Yole Developpment
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Presentations

MICRON logo
  • Koen De Backer
VP of Smart Manufacturing and AI – Micron

Bio coming soon…

  • Topic: Smart Manufacturing

Abstract coming soon…

MICRON logo
  • Micron

Profile coming soon…

Mustafa Pinarbasi
  • Mustafa Pinabasi
CTO, SVP Magnetics Technology – Spin Memory

Mustafa Pinarbasi is the CTO and Sr. Vice President of Magnetics Technology at Spin Memory (Previously Spin Transfer Technologies). Before joining Spin Memory in 2013, Dr. Pinarbasi was a CTO and SVP of Technology Development at SoloPower, Advanced Technology Department Manager at Hitachi GST and Distinguished Engineer at IBM. His accomplishments at IBM include the development of the giant magneto-resistance sensor used in the first GMR-based hard disk drives (HDD) and pioneering the adoption of ion beam sputtering technology into the read sensor production. He led the development of tunneling magneto-resistance (TMR) read head processing at Hitachi GST and the development of flexible and light weight solar panels at SoloPower. Dr. Pinarbasi holds a Ph.D. from the University of Illinois at Urbana-Champaign. He is an inventor with over 200 U.S. patents, has authored or co-authored over 30 scientific publications and has received numerous industry awards.

  • Topic: Magnetic Random Access Memory Technology and Applications

Spin Transfer Torque MRAM (STT-MRAM) is the emerging non-volatile memory technology. STT-MRAM technology has critical advantages over other memory technologies with its non-volatility, fast write and read operation, low power requirements, scalability, and easy integration to CMOS processing. STT-MRAM process integration requires 2 to 4 additional mask steps and is already in high volume manufacturing in CMOS logic. The performance of the MRAM devices are being improved further to expand the use of this technology into the new areas such as last level cache applications. This application requires high speeds with low current, at the same time it must meet high endurance levels along with needed data retention times. Magnetic tunnel junctions can be designed with a wide variety of parameters but write current and data retention times are directly coupled leading to undesirable tradeoffs. Unique solutions that address these high performance requirements will be discussed.

spin memory logo
  • Spin Memory

Profile coming soon….

Simone Bertolazzi
  • Simone Bertolazzi
Sr Technology and Market Analyst, Memory – Yole Developpment

Simone is a Senior Technology & Market Analyst at Yole Développement (Yole), working with the Semiconductor, Memory and Computing division. He is a member of Yole’s Memory team and contributes daily to the analysis of memory markets and technologies, their related materials, and fabrication processes. Previously, Simone conducted experimental research in the fields of nanoscience and nanotechnology, focusing on emerging semiconducting materials and their device applications. He has authored or co-authored more than 15 papers in high-impact scientific journals and was awarded the Marie Curie Intra-European Fellowship. Simone obtained a PhD in Physics in 2015 from École Polytechnique Fédérale de Lausanne (Switzerland), where he developed flash memory cells based on heterostructures of 2D materials and high-κ dielectrics. Simone also earned a double M. A. Sc. degree from Polytechnique de Montréal (Canada) and Politecnico di Milano (Italy), graduating cum laude.

  • Topic: Memory Technologies and Market Trends

Continuous advancements in semiconductor memory are crucial for sustaining the ever-growing bit demand from modern data-centric societies. Amid COVID-19 and trade-war tensions, 2020 has been a year of growth for the memory industry with revenue growing by ~15% up to $122B. NAND and DRAM are the workhorse technologies, accounting together for 96% of the memory market. Despite rising technical challenges, they will continue scaling throughout the next decade both in terms of density and cost-per-bit. This talk will provide an overview on the stand-alone memory industry, discussing mainstream technologies and related markets, and will give insights into emerging non-volatile memory (NVM) business with a focus on manufacturing challenges and players’ dynamics.

YOLE logo
  • Yole Developpment

Yole Développement (Yole) has grown to become a group of companies providing marketing, technology and strategy consulting, corporate finance services, reverse engineering and costing services. With a strong focus on emerging applications using silicon and/or micro manufacturing, Yole Group of Companies has expanded to include more than 80 collaborators worldwide covering MEMS and image sensors, Compound Semiconductors, RF Electronics, Solid-state lighting, Displays, Software, Optoelectronics, Microfluidics & Medical, Advanced Packaging, Manufacturing, Nanomaterials, Power Electronics, Batteries & Energy Management and Memory. Yole, along with its partners System Plus Consulting, PISEO and Blumorpho, support industrial companies, investors and R&D organizations worldwide to help them understand markets and follow technology trends to grow their business. More information on www.yole.fr. Follow Yole on LinkedIn and Twitter.

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