US ISES 2022 Speaker
Dr. Sanjeev Aggarwal
Sanjeev Aggarwal is the President and Chief Executive Officer of Everspin Technologies. With over 25 years of expertise in the non-volatile memory and semiconductor industry, he has been instrumental in shaping Everspin since its inception in 2008 in various leadership positions. Most recently, he served as the Chief Technology Officer driving product and technology roadmaps and business agreements with partners, vendors, and suppliers. As the Vice President of Technology R&D, he directed cross-functional teams to develop and qualify new technology and products. As Vice President of Operations, he managed manufacturing operations, supply chain, and managed joint development agreements for technology transfer and production. Before Everspin, he was at Freescale Semiconductor and part of the team that spun out to form Everspin Technologies. Prior to MRAM, he worked on developing Ferroelectric memories at Texas Instruments. In 2005, he was awarded the Technical Excellence Award by the International Symposium on Integrated Ferroelectrics for his contributions to commercializing FRAM technology.
Sanjeev is Senior Member, IEEE and his technical contributions include over 100 issued patents, more than 100 publications and numerous invited presentations. He graduated from Cornell University with a doctorate in Materials Science and Engineering. Sanjeev received his bachelors from Indian Institute of Technology, Varanasi in Ceramic Engineering.
Challenges and Opportunities for STT-MRAM Product Commercialization
Spin Transfer Torque MRAM (STT-MRAM) is a reliable persistent memory technology with high speed, high endurance, and power saving attributes. The continued evolution of computing from data centers to IOT Edge to space based devices are driving the growing need for STT-MRAM. Everspin has successfully commercialized its STT-MRAM technology; tuned to address different market segments that require optimization for each specific requirement.
MgO/CoFeB based perpendicular MTJ (pMTJ) arrays were developed and integrated into the copper backend of 28nm CMOS technology. MRAM products need to balance key parameters that determine data retention, write error rate, and cycling endurance. In order to optimize this performance/reliability trade-off, we have engineered our pMTJ stacks for high spin torque switching efficiency and robust tunnel barrier reliability. We have achieved high yields through MTJ stack engineering and process integration improvements. In this talk, we present results from Everspin’s 1Gb STT-MRAM parts that are in high volume production and optimized for commercial (0C to 85C) data center applications. We will also introduce our next generation of STT-MRAM technology optimized for low-power, low-latency, infinite read/write industrial (-40C to 85C) applications.
Everspin Technologies, Inc
Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world.
Core Competence with MRAM: From Perpendicular to Field-Switched
Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 670 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells.
Manufacturing – The Capacity to Deliver
In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ STT-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.