US PSES 2022 Speaker
Alex Lidow, Ph.D.
Alex Lidow is CEO and co-founder of Efficient Power Conversion Corporation (EPC). Prior to founding EPC, Dr. Lidow was CEO of International Rectifier Corporation. A co-inventor of the HEXFET power MOSFET, Dr. Lidow holds many patents in power semiconductor technology and has authored numerous publications on related subjects, including co-authoring the first textbook on GaN transistors, GaN Transistors for Efficient Power Conversion, now in its third edition published by John Wiley and Sons. Lidow earned his Bachelor of Science degree from Caltech and his Ph.D. from Stanford.
Roadblocks to GaN Adoption in Power Systems
It has been more than 12 years since the first GaN-on-Si power transistors started in volume production, and in many applications such as lidar and space electronics adoption has been extremely rapid. Lidar flourished as a result of GaN device speed which is more than ten times faster than the aging silicon MOSFET. Space electronics has rapidly accepted GaN-on-Si power transistors due to their extreme radiation hardness, high performance, and small size compared with Rad Hard MOSFETs.
But what about other markets such as consumer products, computers, motor drives, and automotive. In each of those areas GaN devices have appeared in volume, but many designers are still on the sidelines. With over 1,000 customers over just the past year, we have seen only 10% of first-time customers convert to repetitive customers within one year. In this talk we will discuss the most common reasons for some customers to be slower in their embracing what is clearly a displacement technology for their older silicon-based power MOSFETs. Without going into the detailed statistics, we will attempt to list the reasons in order of frequency with the understanding that some applications will place higher emphasis than others on certain characteristics.
Efficient Power Conversion Corporation (EPC)
EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for e-mobility, robotics, drones, and low-cost satellites.