US PSES 2022 Speaker

Prof. Alex Huang

  • University of Texas at Austin
  • Dula D. Cockrell Centennial Chair in Engineering and Director, Semiconductor Power Electronics Center
  • Biography

Alex Q. Huang received his B.Sc. degree from Zhejiang University, China in 1983 and his M.Sc. degree from Chengdu Institute of Radio Engineering, China in 1986, both in electrical engineering. He received his Ph.D. from Cambridge University, UK in 1992. He was a professor at CPES Virginia Tech from 1994-2004. From 2004 to 2017, he was the Progress Energy Distinguished Professor of Electrical and Computer Engineering at NC State University where he established and led the NSF FREEDM Systems Center. Since 2017, he has become the Dula D. Cockrell Centennial Chair in Engineering at University of Texas at Austin where he directs the Semiconductor Power Electronics Center (SPEC). He has mentored and graduated more than 80 Ph.D. and master students, and has published more than 600 papers in international conferences and journals. He has also been granted more than twenty U.S. patents. He is the recipient of the NSF CAREER award, the prestigious R & D 100 Award, the MIT Technology Review’s 2011 Technology of the Year Award, the 2019 IEEE IAS Gerald Kliman Innovator Award, the 2020 IEEE PELS R. David Middlebrook Achievement Award and the 2021 IEEE PES Energy Internet Pioneer Award. Dr. Huang is a fellow of IEEE and National Academy of Inventors.

  • Presentation

Power Semiconductor Devices: An Overview

Modern civilization is related to the increased use of electric energy for industry production, human mobility, and comfortable living. Highly efficient and reliable power electronic systems, which convert and process electric energy from one form to the other, are critical for smart grid and renewable energy systems. The power semiconductor device, as the cornerstone technology in a power electronics system, plays a pivotal role in determining the system efficiency, size, and cost. Starting from the invention and commercialization of silicon bipolar junction transistor 60 years ago, a whole array of silicon power semiconductor devices have been developed and commercialized. These devices enable power electronics systems to reach ultrahigh efficiency and high-power capacity needed for various smart grid and renewable energy system applications such as photovoltaic (PV), wind, energy storage, electric vehicle (EV), flexible ac transmission system (FACTS), and high voltage dc (HVDC) transmission. In the last two decades, newer generations of power semiconductor devices based on wide bandgap (WBG) materials, such as SiC and GaN, were developed and commercialized further pushing the boundary of power semiconductor devices to higher voltages, higher frequencies, and higher temperatures. This talk reviews some of the major power semiconductor devices technologies and their potential impacts and roadmaps.

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  • Company Profile

University of Texas at Austin

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US PSES 2022 Speakers

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