The Role of Extrinsic (Early Life) Failures and Stabilization Stress and Burn-In During the Production of Silicon Carbide and Gallium Nitride Power Semiconductors

ISES Docs:

Gayn Erickson, CEO of Aehr Test Systems, to discuss the need to identify early “infant mortality” failures and the importance of Stabilization Stress and Burn-In during the production of Wide Bandgap (WBG) Semiconductors. Areas of focus will include what types of stress and burn-in conditions are used to accelerate extrinsic / early life failures and to stabilize threshold voltages of high power silicon carbide MOSFETs and why this is needed. Mr. Erickson will also discuss the impact of the transition from single die Packages to multi-die modules on the test and burn in production flows and equipment.

Gayn Erickson photo

Gayn Erickson

President & CEO

Aehr Test Systems

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