ICeGaN: the Call of the GaN Revolution

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The semiconductor industry is undergoing a transformational shift with the advent of Gallium Nitride (GaN), a material that offers superior power efficiency, thermal management, and frequency characteristics compared to traditional silicon. GaN’s increased power density and faster switching speeds have revolutionized critical sectors like telecommunications, renewable energy, electric vehicles, and data centers, aligning with the semiconductor megatrends of energy efficiency, miniaturization, and high-speed data transmission.

ICeGaN, the state-of-the-art technology for high voltage GaN HEMTs, enables ease of use and ruggedness thus helping to harvest on GaN expectations and achieve high efficient and high power density in power conversion.

Giorgia Longobardi photo

Dr. Giorgia Longobardi

Founder and CEO

Cambridge GaN Devices

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