GaN D-Mode vs. GaN E-Mode: A Clash of Technologies or The Perfect Co-Existence?

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Gallium nitride (GaN) devices have emerged as a superior alternative to mature technologies like Si, boasting higher efficiency, power density, and cost-effectiveness for various applications. Among the GaN landscape, there are three main technologies: Depletion mode (D-mode), Enhancement mode (E-mode), and vertical GaN, although the latest one not yet broadly commercially available.

D-mode devices function as normally-on switches, therefore used in combination with cascode or direct drive configurations. D-mode cascode devices offer higher gate threshold voltage, lower 3rd quadrant losses or lower gate leakage current. E-mode HEMTs, based on a p-GaN layer on the gate (normally-off), offer advantages like enhanced efficiency at lower voltages (<300V), simpler manufacturing, and improved slew rate control.

This presentation will delve into the strengths and weaknesses of each technology, while also examining their respective target segments, applications, and market sizes.

Bas Verheijen photo

Bas Verheijen

Senior Director GaN Technology and Operations


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