Dr. Q. Jon Zhang is currently the distinguished professor in Fudan University. He was the Principal Engineer for WBG technologies in Alpha and Omega Semiconductors (AOS), USA, leading R&D and production activities on SiC devices, working with a world-leading CMOS foundry to commercialize MOSFETs and Diodes on SiC. Prior to AOS, he was the director of power device technology at the PowerAmerica Institute reviewing the technical proposals and managing wide bandgap power devices, modules and power electronics projects in order to accelerate the adoption of next generation SiC and GaN power electronics. He also served as the adjunct professor of the Department of Electrical and Computer Engineering at NC State University. Before joining NCSU, he has been the Senior Scientist at Wolfspeed, a Cree company for 13 years, leading various projects in both R&D and production in SiC power devices, playing a critical role in the commercialization of all generations of SiC Schottky diodes and MOSFETs. Among his many milestones are demonstrating the industry’s first reported SiC trench MOSFET, 12 kV IGBTs, trench Schottky diode, drift-free BJT, 12 kV GTOs, SiC CIMOSFETs with the record device performance, latest generation of 650V and 1700V SiC MOSFETs for power modules, etc. He received his B.S. and M.S. degrees from Tsinghua University, China, respectively, and a Ph.D. degree from the University of South Carolina. He is the co-author of over 100 technical papers and conference presentations, and is the first or co-inventor on more than 80 US patents. He serves as a technical committee member of ISPSD, reviewer of various journals, and IEEE member.