Dr. Tetsuo Endoh

Dr. Tetsuo Endo

Tohoku University


Tetsuo Endoh joined ULSI Research Center Toshiba Co. in 1987 and was engaged in the R&D of NAND Memory. He became a lecturer at the Research Institute of Electrical Communication, Tohoku University in 1995. He is a professor at the Department of Electrical Engineering, the Graduate School of Engineering, Tohoku University and director of the Center for Innovative Integrated Electronic Systems (CIES). His current interests are novel 3D structured device technology, such as Vertical MOSFETs; high-density memory, such as SRAM, DRAM, 3D-NAND memory and STT-MRAM; and beyond-CMOS technology, such as spintronics-based non-volatile Logic for ultralow power systems such as mobile systems, AI systems and IoT systems. He is also interested in power-management technology, such as GaN on Si based power devices and power integrated circuits with low energy loss and low power consumption for automotive applications. He received the 14th Prime Minister’s Award for his Contribution to Industry-Academia-Government Collaboration in 2016.

He received 2017 National Invention Award “the 21st century Encouragement of Invention Prize” on June 12th for his contribution of the invent of 3D-NAND Memory technology. He received a 2020 VLSI Test of Time Award, VLSI Symposium, 2021. He was a Fellow of the IEEE from 2023.

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Tohoku University