15:05 – 15:25
Technological development and application, challenges and future trends of SiC power devices
This article introduces the current development status and applications of SiC devices, especially in popular fields, the various problems faced by SiC devices, especially the reliability issue of SiC devices. Finally, the author provides the future and prospects of SiC devices, as well as the progress made by Yangjie Technology in SiC devices.
Jun Shi, Ph.D.
Yangzhou Yangjie Electronic Technology Co., Ltd
From 1995 to 2005, studied at Zhejiang University and obtained bachelor’s and doctoral degrees. In 2005, was an academic visitor at the University of Sheffield in the United Kingdom; Subsequently, I was employed as a senior engineer at Siemens (China) Research Institute for the next 5 years, focusing on power electronics technology and its applications in the new energy industry. I have experienced several major power electronics related projects and achieved world leading technology. 3 years of entrepreneurial experience, focusing on the design and development of photovoltaic inverter products. Led a team to develop the 500KW photovoltaic inverter with the highest power density at that time. In 2012, selected as a “double innovation” entrepreneurial talent in Jiangsu Province; I started working at Infineon Technologies for 8 years in 2013 and worked at State Grid subsidiary company Nari Semiconductor for 4 years, focusing on the development and application of power devices (IGBT, SiC) products themselves. I have developed more than 30 IGBT and SiC power devices, which have been widely used in wind power, photovoltaics, energy storage, charging piles, electric vehicles, industrial power supply and other fields. I was selected for the “Purple Mountain Talent Plan High level Innovation and Entrepreneurship Talent Project” in 2023; The current Vice General Manager of Yangjie Technology’s Power Device Division is responsible for the product development, application, and market promotion of power devices such as IGBT and SiC. I have obtained over 10 invention patents.
Yangzhou Yangjie Electronic Technology Co., Ltd
Company Profile
Yangzhou Yangjie Electronic Technology Co., Ltd. is one of China’s leading vertically integrated (IDM) semiconductor enterprises, covering the entire industrial chain from the design and manufacturing of discrete semiconductor chips to device packaging and testing, as well as end-user sales and services. The company offers a comprehensive product portfolio, including discrete device chips, MOSFETs, IGBTs and power modules, SiC devices, rectifiers, protection devices, and small signal products, providing customers with one-stop product solutions.
Yangjie Electronic’s products are widely used in various key fields, including automotive electronics, clean energy, industrial control, 5G communications, security, artificial intelligence (AI), and consumer electronics. Through continuous efforts in technological innovation and market service, the company is committed to meeting the diverse needs of customers worldwide.
The company was listed on the Shenzhen Stock Exchange on January 23, 2014, under the stock code 300373.
扬州扬杰电子科技股份有限公司是国内少数集半导体分立器件芯片设计制造、器件封装测试、终端销售与服务等产业链垂直一体化（IDM）的杰出厂商。产品线含盖分立器件芯片、MOSFET、IGBT&功率模块、SiC、整流器件、保护器件、小信号等，为客户提供一揽子产品解决方案。
公司产品广泛应用于汽车电子、清洁能源、工控、5G通讯、安防、AI、消费电子等诸多领域。
公司于2014年1月23日在深交所上市，证券代码300373，相信在您的关怀支持下，我们一定能够成为世界信赖的功率半导体伙伴。
施俊博士 / 功率模块事业部副总经理