Silicon devices, the workhorse of power conversion in the past 70 years, are reaching their physical limits and slowing down growth in efficiency of power inverters and converters. To overcome the limitations of silicon, power semiconductor industry has started to adopt wide bandgap materials and devices. Their higher current densities, higher operating temperatures and frequencies, and more efficient switching position the performance of wide bandgap power transistors above and beyond their silicon predecessors. Their disruptive nature, however, creates new challenges which need to be addressed in a systematic way to enable high yielding volume manufacturing of reliable devices. Crystal growth, wafering, epitaxy, wafer processing, and packaging of wide bandgap devices require a paradigm shift and an introduction of novel approaches and techniques. Vertically integrated manufacturing addresses most of those challenges and enables fast growth of wide bandgap power semiconductor business. In addition, co-existence with silicon power switches will be discussed.