08:40 – 09:00
xEVs – From Power Semiconductors to the Power Ecosystem
With the advent of competing power semiconductor technologies such as IGBTs, SiC and GaN, there are no dearth of options for customers to select the best solution in terms of cost and performance. However, as xEVs are essentially computers on wheels, the overall supply chain complexity has gone up tremendously. This can be exacerbated while building systems such as traction inverters or OBCs as the power semiconductors need to work well with the overall eco-system (MCUs, controllers, gate drivers etc.) from a performance point of view, while also allowing for multiple vendors to be part of the procurement strategy. This talk will focus on some of the key aspects of a power electronic ecosystem for xEVs and how that is expected to evolve in the future.
Avinash Kashyap Ph.D
Dr. Avinash (Avi) Kashyap is the VP & GM of the Discrete & Wide Bandgap Power BU at Renesas Electronics. He leads a global organization, responsible for P&L, engineering, marketing, applications and revenue generation of power devices incl. SiC, IGBTs, MOSFETs and GaN for the automotive and industrial markets.
Prior to his current role, he was Director of Silicon Carbide and Power Discretes at Microchip Technology where he led engineering and marketing groups focused on product lines that included SiC & Si FETs and diodes, rad-hard devices and RF power switches.
Previously, Dr. Kashyap was leading several power device programs at the GE Global Research Center in Niskyuna, NY. He has been involved in the development of SiC technology since its infancy for 2 decades including pioneering work on compact modeling, SiC integrated circuits and radiation-hardened devices. He has authored more than 35 peer-reviewed publications and has over 20 patents granted or pending. Dr. Kashyap holds an MS & PhD in electrical engineering from the University of Arkansas, Fayetteville. He is a senior member of the IEEE and a member of the Arkansas Academy of Electrical Engineers.