Officials(官方活动)

09:00 – 09:05

Welcome Speech by Government 政府开幕致辞

09:05 – 09:20

Welcome Speech

Salah Nasri

CEO & Co-Founder

I.S.E.S.

09:20 – 09:35

Huishan District People’s Government Promotion Speech 惠山区集成电路产业推荐

Jinfeng Ding 丁劲锋 无锡市惠山区高新技术企业协会副秘书长

09:35 – 09:55

Keynote

CRRC Automotive Power Semiconductor Technology Innovation and Industrialization 中车汽车功率半导体技术创新与产业化

Ding Rongjun

Academician of Chinese Academy of Engineering, Chief Engineer CRRC 丁荣军 院士 / 中车总工程师

CRRC

Part1 Topic: Industry View from the analyst 行业分析师的观点

09:55 – 10:15

Keynote

Powering the Future: Innovations in Power Semiconductors for Vehicle Electrification and Beyond 驱动未来:汽车电气化与功率半导体创新发展报告

Dr. Yik Yee Tan photo

Yik Yee Tan, PhD

Senior Technology & Market Analyst, Semiconductor Packaging

Yole Group

10:15 – 10:30

Global Automotive Outlook 全球汽车发展展望

Janet Tang

Partner & Managing Director

AlixPartners

10:30 – 11:15

Tea / Coffee Break Networking & Business Meeting 2 & 3 社交茶歇及贸易配对会 2&3

Part2 Topic: Insights from leading semiconductor companies shaping the Mobility landscape 全球领先的半导体领导者视野中的电动出 行

11:15 – 11:35

Keynote

Semiconductor Strategies for the Transition to Sustainable Energy and Mobility 向可持续能源和移动转型的半导体战略

Power technologies are pivotal in driving sustainability and achieving carbon neutrality. At the forefront of this revolution, innovative semiconductor solutions are propelling e-mobility and software-defined vehicles into the future. The demand for high-efficiency applications is pushing the boundaries of semiconductor technology, particularly those with wider bandgaps. Silicon carbide has emerged as a game-changer in car electrification and high-end industrial applications. ST is a leading innovator with major investments in R&D and manufacturing investment. With cutting-edge semiconductor solutions, ST is poised to meet the dynamic needs of a rapidly evolving marketplace.

Dino Costanzo

Application Director and head of Motor Control Competence Center in AP.

STMicroelectronics

11:35 – 11:55

Keynote

Infineon Enables Automotive Decarbonization and Digitization Development Infineon 助力汽车低碳化与数字化发展

INFINEON 英飞凌

Gary Zhong

Senior Director and Head of Vehicle Motion Segment

Infineon Technologies AG

11:55 – 12:15

Keynote

Bosch SiC Enable the Future Electric Mobility 博世SiC赋能未来电动出行

Introduce the Bosch Group’s SiC semiconductor business, the trench technology SiC chips. Introduce the power modules that Bosch developed dedicate for mass market new energy vehicles.
The power module on pin-fin cooler.
The Compact SiC Line (CSL)
Leadframe SiC Line (LSL)
介绍了博世集团SiC功率半导体的发展历程,重点介绍了博世集团针对新能源汽车电驱专门开发的碳化硅功率模块的主要特点和性能指标。
(1) 紧凑型碳化硅功率模块(CSL)
(2) 引线框架塑封碳化硅功率模块(LSL)

Dr. Richard Feng

Director of power semiconductor and module R&D center

Robert Bosch GmbH

12:15 – 12:35

Keynote

Embracing SiC in Electric Vehicles 在电动车中拥抱碳化硅

Tong Wu, Ph.D.

Leader of Auto Marketing and Technical Team, Principal Expert, SiC Applications

onsemi

12:35 – 13:45

Buffet Lunch & Business Meeting Networking 4 自助午餐 & 贸易配对会 4

13:45 – 14:30

Part 3 Panel : Synergy Driving Innovation in electrification & Mobility 圆桌讨论:协同驱动电气化与移动性创

Moderator

Salah Nasri

CEO & Co-Founder

I.S.E.S.

Dr. Tim Yeh photo

Panelist

Tim Yeh, Ph.D.

Technical Director

Sanan Semiconductor

Panelist

Wei Wang

Director of BD

Automotive Research Institute (Suzhou), Tsinghua University (TSARI)

Panelist

Jason Wang

Founder

Joinsilicon

Vishnu Kumaresan​, Ph.D logo

Panelist

Vishnu Kumaresan​, Ph.D
Semiconductor Business Specialist & Segment Leader

Volvo Group

Panelist

Damon Tsai

Head, Product Marketing

Onto Innovation

Panelist

Changlin Pang

Platform Integration Lead

InchFab

Part 4 Topic: Automotive Innovations Challenges & Differentiation 汽车创新的挑战与差异化

14:30 – 14:50

Keynote

Opportunities in Commercial Vehicle Decarbonization 商用车辆的低碳机遇

Vishnu Kumaresan​, Ph.D logo

Vishnu Kumaresan​, Ph.D

Semiconductor Business Specialist & Segment Leader

Volvo Group

14:50 – 15:10

Keynote

The Layout of Electric Drive and High Voltage System in NIO 蔚来在电驱及高压系统的布局

NIO is a globally leading tech company, and electric drive and high-voltage system is one of the 12 full-Stack technologies. NIO has developed four generation EDS, the latest 900V EDS shows higher performance, more compact and more intelligent: In-house design SiC power module and power stack enable extremely high power density ; Innovative electronic and software design enable boost charger function with high power and high voltage range ; AI based EDS technology empowering vehicles to be more Smart, Safe, and Efficient .

蔚来是全球领先的科技公司,电驱及高压系统就是12个全栈自研技术之一。蔚来已经开发了四代电驱系统,最新的900V电驱系统展示了更高的性能,更紧凑以及更智能:自研功率模块和逆变器极大提升了功率密度;创新性的软硬件设计使得系统可以在更宽电压范围内实现更高功率的充电功能;AI 在电驱系统的应用使得整车更加聪明、更加安全更高效。

Wilson Hong

Senior Director, Power Electronics Design Department & Senior Expert, ECU Product Engineering

NIO

Part 5 Topic: Energy Solutions for Tomorrow 未来能源解决方案

15:10 – 15:30

Keynote

Technology Innovation of ROHM’s Power Devices ROHM电源设备的技术创新

1)ROHM Group Corporate Profile
2)Medium-Term Management Plan
(Focusing on Analog LSIs and Power Devices)
3)Growth Strategy of SiC Power Devices
4)Growth Strategy of GaN Power Devices
1)ROHM集团公司概况
2)中期管理计划(专注于模拟LSI和电源设备)
3)SiC功率设备的增长战略
4)GaN功率设备的增长战略

Jun Li

General Manager (FAE Head Quarter), Shanghai

ROHM Semiconductor

15:30 – 15:50

Keynote

From Prototyping to Advanced Manufacturing of Sensors and Optical Components for Automotive Applications. 从原型设计到汽车应用中传感器和光学元件的高级制造。

Maksym Plakhotnyuk, Ph.D.

CEO & Founder

ATLANT 3D

15:50 – 16:10

An OSAT Perspective of the Power Semiconductor Market OSAT对电力半导体市场的视角

Amkor 安靠

When talking about the power semiconductor market, most outsiders would describe it with words like “mature”, “stable” and “simple” compared to the mobile and digital semiconductor markets. One look from the inside will tell you this is not true. With the continued adoption of Wide Band Gap (WBG) materials along with the market forces driving electrification and renewable energy, you will see that power is anything other than “simple”.
Power semiconductors are becoming increasingly important in the overall semiconductor supply chain and innovations need to keep pace with the need for clean, efficient, and higher power delivery. Although innovations in power generally follow the smaller/better/faster/cheaper engine that continues to drive the semiconductor industry, some interesting dynamics are depending on the application and target market. The traditional market wants to standardize, and the new applications value optimization. These competing forces can create havoc from a supply chain standpoint, and as the power semiconductor market trends towards increasing complexity, then manufacturing strategies will need to adapt. From an OSAT perspective, this presents both a challenge and an opportunity.
This presentation will discuss three key areas of the market from an OSAT perspective and look at lessons learned from past events in our industry to give us some insight into what the supply chain might look like as both WBG devices and power foundry services continue to grow with demand from automotive, industrial, compute and commercial applications.
在谈到电力半导体市场时,大多数外部人士会用“成熟”、“稳定”和“简单”这些词来形容,与移动和数字半导体市场相比。然而,从内部来看,这种描述并不准确。随着宽禁带(WBG)材料的持续采用以及推动电气化和可再生能源的市场力量,你会发现电力半导体远非“简单”。
电力半导体在整个半导体供应链中变得越来越重要,创新需要跟上清洁、高效和更高功率传输的需求。尽管电力半导体的创新通常遵循更小/更好/更快/更便宜的引擎,这种引擎继续推动半导体行业的发展,但根据应用和目标市场的不同,一些有趣的动态也会出现。传统市场希望标准化,而新应用则重视优化。这些相互竞争的力量可能会从供应链角度造成混乱,随着电力半导体市场趋势变得越来越复杂,制造策略也需要适应。从OSAT(外包半导体组装和测试)角度来看,这既是一个挑战,也是一种机遇。
本次演讲将从OSAT的角度讨论市场的三个关键领域,并通过回顾我们行业中的过往事件,提供一些见解,以预测当WBG器件和电力代工服务随着汽车、工业、计算和商业应用的需求不断增长时,供应链可能会是什么样子。

Troy Lin

Director, Product Marketing

Amkor Technology, Inc.

16:10 – 16:55

Tea/Coffee Break Networking & Business Meetings 5&6 社交茶歇及贸易配对会 5&6

16:55 – 17:15

Keynote

High Voltage SiC MOSFET for renewable energy application with simpler design and higher power density 高电压SiC MOSFET用于可再生能源应用,具有更简单的设计和更高的功率密度。

WeEn Semiconductors 瑞能

As the renewable energy market grows, more and more companies are trying to simplify the inverter design from three-level to two-level topology. With SiC MOSFETs with higher breakdown voltage up to 2200V, two-level inverters are made possible. These 2200V SiC MOSFETs employ the latest technologies with smaller pitch size and better packaging technology with better thermal performance, and can help increase the power density with lighter system weight.

随着可再生能源市场的增长,越来越多的公司试图将逆变器设计从三电平简化为两电平拓扑。借助高达2200V的SiC MOSFETs,这种两电平逆变器变得可行。这些2200V的SiC MOSFETs采用了最新的技术,具有更小的间距尺寸和更好的封装技术,提供了更优的热性能,能够提高功率密度并减轻系统重量。

Kevin Shen

Chief Strategy & Business Operation Officer

WeEn Semiconductors

17:15 – 17:20

Mastering Plasma Technology Application – focus on local support for the semiconductor industry 掌握等离子体技术应用 – 专注于半导体行业的本地支持

TRUMPF Huettinger establishes provider for process power solutions with engineering and service centers throughout the world. Developing cutting-edge technology and high-end industrial solutions, with a global production footprint in Europe and Asia, we are focusing on customer closeness to enable for best-in-class support.

TRUMPF Huettinger 在全球设立了提供工艺电源解决方案的工程和服务中心。我们致力于开发尖端技术和高端工业解决方案,在欧洲和亚洲拥有全球生产基地,重点关注客户的需求,以提供一流的支持。

Pawel Ozimek, Ph.D EE

CTO, TRUMPF Huettinger and Managing Director, TRUMPF Huettinger Poland

TRUMPF Huettinger

Part 6 Equipment / Materials Suppliers Update 设备/材料供应商新趋势 发布

17:20 – 17:30

Electroless Metallization of power semiconductor devices – challenges and benefits 功率半导体器件的化学镀金属化—挑战与机遇

In today’s world with its increasing demand in power semiconductor devices for electrification, e-mobility and enabling the flexible use of green energy it has become more and more imminent that it is not only necessary to involve new semiconductor materials (e.g. SiC, GaN) but also apply alternative manufacturing technologies to maintain the flexibility and reliability on the next generation of power semiconductor devices.
Electroless metallization processes from MKS are part of these alternative technologies for power semiconductor device manufacturing and have been established in the industry over past 10 years with their benefit of providing maskless metallization with higher throughput capability at a reduced Cost of Ownership compared to physical metallization techniques. Usually, electroless processes are being used as final finish on Cu or Al-based substrates but there is also the possibility of direct metallization of semiconductor material (e.g. Si, SiC, GaN) using the electroless processes and create a reliable ohmic contact

在当今世界随着电气化、电动汽车以及实现绿色能源灵活应用,对功率半导体器件的需求不断增加保持下一代功率半导体器件的灵活性和可靠性越来越紧迫不仅需要应用新的半导体材料(例如SiC、GaN),而且需要应用替代制造技术 

MKS公司的化学金属化工艺是用于功率半导体器件制造的这些替代技术的一部分并且已经在该行业中应用超过了十年自对准金属化的优点与物理金属化技术相比,具有更高的产能和更低的生产成本。通常,化学镀工艺被用于铜基或者铝基的最终处理另外还有一种可能性,就是在半导体材料(例如Si、SiC、GaN)表面直接用化学镀工艺沉积金属以形成一个可靠的欧姆接触 

Dr. Stefan Pieper

Global Application Manager

mks | Atotech

17:30 – 17:40

Deep Silicon Etch – Enabling Key Solutions in Specialty Technologies 深度硅刻蚀 — 推动专业技术关键解决方案

Lam Research 泛林集团

Deep reactive ion etch (DRIE) technologies were developed more than 30 years ago to enable the fabrication of advanced surface micromachined micro-electromechanical systems (MEMS). Today the technology is not only critical to MEMS device manufacturing, but also the fabrication of advanced CMOS image sensors and power electronics. Furthermore, by enabling the high-performance etching of through silicon vias (TSVs), the technology is key to the advanced packaging solutions that are driving the architecture of the chips that support artificial intelligence (AI). In doing so, they are enabling the convergence of sensing and AI solutions to support the increasingly smart world in which we live.
At Lam we are committed to solving the most pressing challenges in Specialty Technologies and advanced packaging. In this short presentation, we will provide an overview of how Lam’s Rapidly Alternating Process (RAP) and Syndion®
product family are supporting the wide range of applications that are enabled by DRIE.

深反应离子刻蚀(DRIE)技术在30多年前被开发出来,以支持先进表面微机械系统(MEMS)的制造。如今,这项技术不仅对MEMS器件的制造至关重要,还用于先进CMOS图像传感器和功率电子器件的生产。此外,通过高性能刻蚀硅通孔(TSV),该技术对于推动支持人工智能(AI)的芯片架构的先进封装解决方案也至关重要。通过这些方式,它们促进了传感技术与人工智能解决方案的融合,支持我们生活的越来越智能的世界。

在Lam,我们致力于解决专业技术和先进封装领域中的最紧迫挑战。在这次简短的演示中,我们将概述Lam的快速交替工艺(RAP)和Syndion®产品系列如何支持DRIE技术所带来的广泛应用。

Dr. David Haynes

VP Strategic Marketing

Lam Research Corporation

17:40 – 17:50

Ensuring Power Semiconductor Reliability: Testing SiC Semiconductor Devices at KGD Level 确保功率半导体的可靠性:在KGD(良品芯片)级别测试SiC半导体器件

This presentation explores the critical role of comprehensive production testing at the Known Good Die (KGD) level for power semiconductor devices based on SiC technology. The manufacturing complexity and fabrication costs make die-level testing a crucial quality control step for these components. On one side, complexity brings a high potential for defects; on the other side, the need to minimize yield losses is crucial to ensure device affordability.
Focusing on dynamic testing and especially on short circuit testing, we will present the specific challenges of performing these tests on KGD SiC devices, delving into the characteristics that test equipment must possess to face these challenges.
The presentation will demonstrate how a comprehensive KGD test strategy enables manufacturers of SiC devices to minimize downstream production costs while achieving superior product quality and reliability.
这次演讲探讨了在基于SiC技术的功率半导体器件中,全面生产测试在已知良品(KGD)级别的关键作用。制造复杂性和加工成本使得晶圆级测试成为这些组件至关重要的质量控制步骤。一方面,复杂性带来了高潜在缺陷的风险;另一方面,为了确保器件的经济性,最小化良品率损失是至关重要的。
我们将重点关注动态测试,特别是短路测试,展示在KGD SiC器件上进行这些测试的具体挑战,并深入探讨测试设备必须具备的特性以应对这些挑战。
此次演讲将展示如何通过全面的KGD测试策略,使SiC器件制造商能够降低下游生产成本,同时实现卓越的产品质量和可靠性。
Yuanli Sun photo

Yuanli Sun

General Manager, SPEA China

SPEA

17:50 – 18:00

Closing speech 闭幕演讲 – ISES

Salah Nasri

CEO & Co-Founder

I.S.E.S.

18:00 – 18:30

Cocktail Reception & Business Meeting 7 招待酒会及贸易对 接会 7

18:30 – 20:30

Gala Dinner & Award Ceremony 晚宴及颁奖典礼

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