Empowering Europe’s Semiconductor Future: Innovation, Integration & Independence

European Role in the Global Semiconductor Industry

Strategy and role for Data Center, AI and EV?

07:30 – 08:30

Registration

08:30 – 08:50

Welcome Speech

Salah Nasri

CEO and Co-Founder

International Semiconductor Industry Group (I.S.I.G.)

08:55 – 09:05

Empowering Europe’s Semiconductor Future – chances and challenges

The presentation provides a comprehensive overview of Europe’s semiconductor landscape, emphasizing the continent’s efforts to strengthen its position in the global microelectronics market. It highlights strategic initiatives such as the EU Chips Act, regional cluster collaborations, and investment in sustainable manufacturing and innovation ecosystems. While referencing Silicon Saxony as a leading example, the focus lies on broader European opportunities and challenges, including supply chain resilience, talent development, and technological sovereignty. Attendees will gain valuable insights into how coordinated efforts across Europe can empower the semiconductor industry to drive economic growth and secure technological leadership in a competitive global environment.

Frank Bösenberg

Managing Director

Silicon Saxony

09:10 – 09:20

Public funding opportunities for the semiconductors industry in the EU

The semiconductors industry is among the highest beneficiaries of public funding in the EU. Grants target R&D activities, first industrial deployment of breakthrough innovations and first of a kind manufacturing facilities. Securing such State aid and EU funding is a highly competitive process which requires a thorough understanding of the numerous opportunities and associated regulations. Based on several use cases, Marc Isabelle’s presentation will provide a valuable first dive into public funding opportunities for the semiconductors industry in the EU.

Marc Isabelle, Ph.D.

Founder & CEO

european economics

Mobility & AI Electrification Developments

09:25 – 09:45

Volkswagen Group Power Electronics Strategy

The presentation will cover our newest power module design, our inhouse prototyping capabilities, and will give an outlook into the future roadmap of our power electronics strategy.

Alexander Krick

Executive Vice President

Volkswagen Group Technology

09:50 – 10:50

Networking Break, Coffee and Business Meetings

10:55 – 11:15

Keynote

Innovation That Scales: Aligning Semiconductor Breakthroughs with Automotive Value Creation

In today’s automotive landscape, cost pressure is relentless, and the need for fast innovation is evident. As high-voltage technologies rapidly evolve, our challenge is clear: deliver cutting-edge solutions that create tangible value for customers — without compromising on affordability or performance. It is only by aligning chip technology, package concepts, and application understanding that we can ultimately create sustainable value along the automotive value chain.

Stefan Obersriebnig

SVP High Voltage Modules

Infineon Technologies AG

11:20 – 11:40

Keynote

Power Modules at the Crossroads: Enabling Scalable EV Innovation

Power modules are a key enabler in EV inverter systems—impacting thermal performance, reliability, and serving as the foundation for mechatronic integration. While the efficiency of electric vehicles is primarily driven by semiconductor technology, power modules play a crucial role in realizing that potential at the system level. The market of module manufacturing is highly fragmented, with IDMs, Tier 1s, OSATs, and new entrants each pursuing different business models. This presentation explores how the industry can evolve toward more collaborative and scalable approaches—aligning innovation, integration, and value creation to support the next generation of electric mobility.

Kai Konrad

Director Global Semiconductor Purchasing

Stellantis

11:45 – 12:55

Buffet Lunch

13:00 – 13:20

Datacenter Trends and Power Architecture evolution

Datacenters are in big disruption with AI proliferation, introducing very fast product cycles. Power consumption at the xPU is increasing dramatically (multi-kW), bringing the total power in the rack up to several hundreds kW to 1MW.

For this reason, conventional architecture of power distribution inside the rack, based on 48V intermediate Bus generated from the AC main, needs to be modified to manage this dramatic increase of power. Current structure of the rack and architecture cannot manage the power increase without incurring in huge distribution losses.

A higher Voltage DC Bus is getting introduced by the Hyperscalers, and supported in R&D by the OEMs and PSU suppliers. This will be generated in an external side-car rack starting from the main AC, while the computational rack will be supplied by this voltage and will contain all the GPUs, or TPUS required to increase the computational performance of the AI infrastructure. The new isolated topologies involved in this high Voltage DC Architecture will require many high voltage switches, especially GaN will be extremely useful, since of the capability to switch extremely fast, and as a consequence enable a smaller size and high power density required by the huge power level of these new Racks. On the low voltage side to generate the intermediate 48V to reuse the existing ecosystem, both Silicon MOSFETs or GaN HEMT can be alternatives to achieve the performance and size requirement.

Other challenges have to be resolved also at lower voltage, where the current required by the GPU will also increase, with values that trend to a few kW. This requires to deliver the power to the load in unconventional ways, with vertical delivery, from the opposite side of the SoC, in the aim to reduce distribution losses. This vertical power delivery (VPD) can be implemented by discrete solutions, or more integrated modular approaches to reduce size and parasitics, integrating inductors and capacitors together with active elements. Renesas is able to supports all these new architectural elements, leveraging its GaN and Si switches portfolio, together with digital controllers for IBC and Multiphase, drivers, and digital and analog PoL and BMS controllers.

Pietro Scalia

Head of Power System Marketing and Architecture

Renesas Electronics

13:25 – 13:45

GaN in the Fast Lane: Separating Fact from Fiction in Automotive Power

The divide between GaN and SiC is decreasing. Costs, reliability and efficiency are no longer a barrier for adoption, yet there still seems to an issue where GaN is misunderstood or not applied correctly.

Exploring GaN and separating fact from fiction, this presentation reveals its true role in the automotive sector and shows how forward-thinking innovators can apply it effectively to gain a competitive advantage.

Giorgia Longobardi, Ph.D.

Founder and CEO

Cambridge GaN Devices

Expanding the Role of WBG Semiconductors in Industrial Systems

13:50 – 14:10

Headline: Design Smarter, Move Faster: Leveraging Simulation to Unlock SiC’s Potential in Industrial Power Modules

Silicon Carbide is redefining efficiency and power density in industrial and renewable power systems. Today, SiC is mainly used in applications like solar and battery energy storage. New chip voltage levels beyond the 2kV simplify and shrink designs. At Semikron Danfoss, our edge lies in combining advanced packaging with simulation-driven design. Virtual prototyping – based on full electromagnetic models for our power modules – allows us to simulate and optimize chip placement, wire bonding, current balancing, and switching behaviour including short-circuits from the earliest design phase. This accelerates development and ensures robust, application-ready modules.

The SEMITRANS 20 2kV SiC exemplifies this approach. Backed by our proven packaging toolbox – including soldering, sintering, Al/AlCu wire bonding, the bond buffer and thermally advanced materials – we are ready to scale SiC performance into industrial sectors like wind power, where reliability and efficiency are paramount.

Dominic Dorfner, Ph.D.

President & CEO

Semikron Danfoss

14:15 – 14:35

Advanced low inductance SiC Power Module with 3D wiring technology

An advanced 3D Wiring technology has been developed to increase the power density of modules equipped with silicon carbide (SiC) for electric vehicle (xEV). Applying the multi layer 3D wiring technology with copper pin-terminals demonstrates about twice the power density of a conventional copper clipped wiring structure. The ⊿Tvj power cycling lifetime of power modules with the developed 3D wiring technology is approximately five times longer than the conventional copper clipped wiring.

Thomas Heinzel

Head of Semiconductor Technical Division

Fuji Electric Europe GmbH

14:40 – 15:00

HIGH-TECH HV IGBT AND SIC MODULES FOR RAILWAY APPLICATIONS

Joint Collaboration Presentation

An example of vertical solution implementation through partnership is described in this presentation using rail applications. ŠKODA ELECTRIC and HITACHI ENERGY collaborate on applying high-voltage IGBT semiconductors in various module platforms, including newest LinPak IGBT modules for serial usage in traction converters with a 3 kV DC power supply system. In recent years, the ŠKODA GROUP has been intensively developing hybrid dual-system trains with battery drive for a range of 80-120 km on non-electrified lines. A necessary condition for BEMU is the development of a high-tech DC-DC converter with galvanic isolation of 10 kV and a continuous power of 800 kW. Given the weight of LTO batteries, emphasis was placed on minimum weight and installation dimensions and high efficiency of the converter. This clearly leads to the choice to adopt on power semiconductor side SiC technology both on the 800 V traction battery side and on the 3 kV DC traction converter side. Therefore, the partnership with Hitachi Energy was used to develop a SiC module for a voltage of 3.3 kV with an insulation voltage of 10.2 kV. The development of this semiconductor took place in parallel with the development at ŠKODA ELECTRIC converter development over the last couple of years, leading to the stage that as of today 4 BEMU trains are in operation on Czech Railways and these SiC based semiconductors work absolutely reliably, and were the key enabler for this new train platform. As a further step into performance of this train platform, based on the experience with another SiC Powermodule, the RoadPak SiC, for electric buses, there is now the development of a traction inverter for BEMU trains with these SiC modules with parameters of 1200V and the record current of 1150A for powering asynchronous traction motors with a continuous power of 340 kW. The development of power SiC modules and their application in railways allows to come up with ecological solutions for modern trains and significantly reduce the environmental burden and increase the comfort of passengers on the railway. European cooperation between two major companies is a best practice example of this.

Ladislav Sobotka, Ph.D.

Director of Engineering and R&D

Skoda Electric

Rainer Kaesmaier, Ph.D.

Managing Director Semiconductors

Hitachi Energy Ltd.

15:05 – 16:05

Networking Break, Coffee & Business Meetings

16:10 – 17:10

Panel Session: Electrification Market & WBG Adoption

Moderator

Aly Mashaly

Founder & CEO

Verotera

Panelist

Maike Mueller, Ph.D.

Head of Semiconductor Strategy & Development Power Modules

Volkswagen Group Technology

Panelist

Ralf Bornefeld

SVP Business Unit Power Semiconductors & Modules

Bosch

Panelist

Edoardo Merli

SVP and GM of Business Group Wide Band Gap, IGBT & Modules

Nexperia

Panelist

Patrick Schwarz, Ph.D.

Lab Director Power Packages

Huawei Technologies Co., Ltd.

Panelist

Kai Konrad

Director Global Semiconductor Purchasing

Stellantis

Panelist

Ajay Poonjal Pai, Ph.D.

Director, Head of WBG Innovation & Application

Sanan Semiconductor

Panelist

Denis Marcon, Ph.D.

General Manager and SVP

Innoscience

Equipment & Material Suppliers

17:15 – 17:25

Enabling Solutions for GaN Processing

Gallium Nitride (GaN) is one of the most important third generation semiconductor materials. Its wide bandgap makes it an excellent candidate for power electronics – GaN high electron mobility transistors (HEMTs) have already become well established in Specialty Technology applications such as consumer fast charging and are gaining traction in automotive. In addition, GaN and its compounds are gaining momentum across a wider range of applications, including µLEDs and RF power amplifiers.

Whilst the properties of GaN bring exciting benefits to these applications it also poses some unique processing challenges. Lam has led the advancement of process technologies for 200 mm GaN on Si fabrication for almost a decade and is also enabling the transition to 300 mm GaN on Si device manufacturing.

In this paper, we will discuss some critical challenges and solutions for GaN processing both, on 200mm and 300mm Si substrates.

Annika Peter

Senior Technology Manager

Lam Research Corporation

17:30 – 17:40

Wet Process Technology Roadmap for Power Device Manufacturing

In this work we demonstrate strain relief etching using an advanced chemical etching (ACE) process of the full wafer surface on commercial grade n-type 4H-SiC at production throughputs (μm’s/hr). The data shows >4x improvement of breakage strength in laser split wafers. Warp and bow of ground wafers is reduced to match wafers that have been CMP processed showing the potential of stronger, flatter wafers being available for chemical mechanical polishing.
Strain relief etching is a critical wet process technique use in high volume manufacturing of semiconductor substrates and device wafers. The goal of a strain relief etch is application dependent but can generally be considered for removal of warp/bow or improving mechanical strength by removing sub-surface damage thereby optimizing yields. Silicon Carbide (SiC) has a high chemical resistance which has blocked the manufacturing community from using strain relief etching to date.
Without an effective wet etch, the SiC substrate manufacturing community has resorted to expensive mechanical techniques for the polishing and thinning of wafers, which imparts significant stress and strain within the layer. Use of extensive mechanical techniques is also expensive and difficult to perform at volume where wafers are fragile early in the substrate manufacturing line. Research has explored mechanisms of wet etching for creating microstructures on 4H-SiC and trenches in 6H-SiC.

Oliver Whear

Director of Semiconductor Technology

RENA Technologies GmbH

17:45 – 18:00

Networking Transfer and Walk

18:00 – 18:30

Boarding

18:30 Cruise Departure

18:30 – 19:30

Cocktail Reception

19:30 – 21:30

Gala Dinner

Awards Ceremony
Dr. John Palmour Excellence Award

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