Empowering a Sustainable Future: Innovation, Collaboration and Navigating Challenges in Power Electronics Industry

07:30 – 08:10

Registration

08:10 – 08:30

ISIG 15th Year Anniversary Welcome

Salah Nasri

CEO and Co-Founder

International Semiconductor Industry Group (I.S.I.G.)

Saeed Amidi

Founder & CEO

Plug and Play Tech Center

Rouzbeh Borhani

Head of Semiconductors

Plug and Play Tech Center

Rouzbeh Borhani

Head of Semiconductors

Plug and Play Tech Center

Data Centers & AI: Challenges and Opportunities in Power Electronics

08:35 – 08:55

Keynote

Next-Generation GaN/SiC To Accelerate Electrification

New developments in both GaN and SiC combined with new power systems architecture are creating new opportunities to accelerate electrification of our planet across multiple, major markets including electric transportation, renewables, energy storage and more. Technology details, application examples and market implications will be presented.

Gene Sheridan

CEO

Navitas Semiconductor

09:00 – 09:20

Keynote

We power AI: High density solutions for AI accelerators

In today’s rapidly evolving technological landscape, the demand for cutting-edge Artificial Intelligence (AI) solutions has never been greater. At the heart of these innovations lies an often-overlooked yet crucial component: power. As a leader in the semiconductor industry, we are at the forefront of powering AI from grid to core. This approach ensures that every stage of the power conversion process is optimized to meet the stringent demands of AI data centers. Enabling efficient power conversion from grid to core is essential for achieving superior power densities, thereby enhancing performance/watt while reducing the total cost of ownership (TCO). In this talk, we will focus on the final power conversion step, specifically the second stage down to the core voltage. Our power modules, which enable true vertical power delivery, significantly reduce power delivery network losses, thereby increasing overall system efficiency. Infineon high density solutions push the power density envelope without compromising thermal performance. Additionally, we will talk about our new quad module and demonstrate the benefits of its vertical power flow through chip embedding.

Athar Zaidi

SVP & GM, Power ICs and Connectivity Systems

Infineon Technologies AG

Driving Innovation and Ensuring Domestic Competitiveness

09:25 – 09:45

Keynote

Power & AI

Ahmad Bahai, Ph.D.

Senior Vice President and Chief Technology Officer

Texas Instruments

09:50 – 10:50

Networking Break and Business Meetings

10:55 – 11:15

Keynote

The Role of Power Semiconductors in Mobility, Infrastructure, and AI

In the dynamic realm of modern technology, power semiconductors are pivotal in revolutionizing mobility, infrastructure, and artificial intelligence (AI). This presentation delves into the impact of these advanced technologies, such as WBG devices and insulated-gate bipolar transistors (IGBTs), on the efficiency, performance, and sustainability of high-growth markets. We will explore the latest innovations driving the mobility sector, emphasizing how these materials and intelligent designs enhance vehicle performance and efficiency. We will also examine the critical role of power semiconductors in sustainable energy systems and AI applications, showcasing their importance in enabling more efficient technologies.

Fabio Necco

VP and GM of Automotive Power Division

onsemi

11:20 – 11:40

Driving Innovation, Ensuring Domestic Competitiveness, Increasing Supply Chain Resilience

Innovation leadership is one way to exploit market opportunities. Bosch has used an existing technology from a neighboring field and advanced the technology to gain such a technological leadership.

To be successful in the current geopolitical environment this does not suffice, and additional measures are required to meet customer expectation.

One of them is to offer supply chain resilience by offering products out of different regions. This demands in consequence also a consistent management of supplier quality.

A complete management of innovation, technology and supply chain becomes increasingly important as supply chain risks increase.

Thorsten Scheer, Ph.D.

Regional President of the Bosch Automotive Electronics Division, North America

Bosch

11:45 – 12:05

SK Siltron CSS navigating the global uncertainties with advances in 200mm technology and readiness

Future SiC power devices will be manufactured on 200mm wafers to increase competitiveness with improved cost efficiency, robust supply assurance, and greater usable area. SK Siltron CSS is ready with its 200mm capacity expansion as a pure play SiC materials supplier.

Edward Chen

VP Commercial

SK Siltron CSS

12:10 – 12:30

1700V GaN and Its Performance as an Alternative to SiC

Several companies have developed technologies for high voltage GaN”; generally specified at 600 V and perhaps as high as 800 V with suitable de-rating for SOA and the frequency of peak voltage application. These devices have had great success in off-line consumer products such as cellphone and notebook adapters, where size and weight are critical factors in the product value proposition. GaN is also found in appliances with high power needs such as refrigerators, and in consumer entertainment products – TVs – and personal computing systems. Designers appreciate GaN’s exceptional efficiency and robustness, and also the cost-benefit curve as the technology matures and displaces silicon MOSFETs. But for GaN to expand beyond consumer products and into higher power applications it must demonstrate that it can stand toe to toe with silicon carbide (SiC) in performance at industrial voltages. This presentation describes a 1700 V GaN HEMT device in the flyback application and compares it directly with a SiC equivalent, concluding with some insights into the future of both wide bandgap technologies.

Douglas Bailey

VP Marketing

Power Integrations, Inc.

12:35 – 13:35

Buffet Lunch

13:50 – 14:10

Enabling the AI Ecosystem with Power Semiconductors

Avinash Kashyap Ph.D.

SVP & Division Head

Vishay Intertechnology, Inc.

Expanding Operations and Energy Future through SiC and GaN

14:15 – 14:35

How foundry services can help to build customized solutions in an evolving SiC Market?

In the rapidly advancing field of renewable energy, Silicon Carbide (SiC) technology stands as a key enabler of the next generation of high-performance power electronics. Here we will examine the critical challenges and emerging opportunities within the sector and highlight how X-FAB innovations are providing a powerful platform for the accelerated development and deployment of customized SiC solutions.
The growing adoption of EV applications, the power bottleneck in data centers and the need for renewable energy solutions has compelled X-FAB to focus it efforts on creating high performing products for automotive, industrial and energy markets, We leverage our expertise in SiC technology and our advanced approach to process integration, we have optimized development cycles, dramatically reducing time to market and equipping customers with a distinct competitive advantage. Attendees will gain valuable insights into how our comprehensive solutions drive rapid innovation, accommodate diverse customer needs, and support the scalable adoption of SiC technologies in propelling global renewable energy initiatives forward.

Rico Tillner

CEO, USA

X-FAB

14:40 – 15:00

The Power of Choice: Expanding the SiC Device Portfolio to Drive Market Growth

This presentation will demonstrate how a diverse portfolio of high-performance SiC devices from new market entrants can drive market growth and innovation. We will explore how expanding our SiC device offerings, tailored to specific applications in automotive, renewable energy, and industrial sectors, can unlock new opportunities. By enabling system-level optimization and fostering close customer collaboration, we can accelerate the adoption of SiC technology and achieve significant market penetration.

Katrin Feurle

Senior Director & General Manager SiC Discretes & Modules

Nexperia

15:05 – 16:05

Networking Break

16:10 – 16:55

Panel Session: WBG Manufacturability and Scaling

Moderator

Mike Rosa, Ph.D.

CMO & SVP Strategy

Onto Innovation

Panelist

Primit Parikh, Ph.D.

VP & GM, GAN Business Division

Renesas Electronics

Panelist

Victor Veliadis, Ph.D.

Executive Director & CTO

PowerAmerica

Panelist

Shiori Idaka, Ph.D.

Head of European Research Co-operation Center (ERC) Semiconductor – European Business Group

Mitsubishi Electric Corporation

Panelist

Rainer Kaesmaier, Ph.D.
Managing Director Semiconductors

Hitachi Energy Ltd.

Panelist

Gianni Vitale

Application Director

STMicroelectronics

17:00 – 17:15

Leveraging a robust and established technology from a partner, U.S. Power Foundry plans to offer advanced GaN device mass production at 200mm

Last September, Polar announced at ISES-Power that it had become a U.S.-owned domestic foundry for sensor and power semiconductor high-volume manufacturing. This presentation will expand on its transformation journey and showcase its latest silicon and GaN power semiconductor offerings for the industry. Polar’s various customer service and enablement models will be discussed, encompassing the spectrum of startups to large companies as well as fabless to IDM companies. The “Captive Capacity” Foundry business model will describe a novel approach that leverages partnerships to achieve world-class technological and cost competitiveness, and supply chain security. The distinct advantages for the national and economic security community (Defense, Energy, Commerce) will be elucidated. A partner guest will be on-stage to delve further into the partnership that will be a unique resource for the worldwide compound semiconductor community.

Surya Iyer, Ph.D.

President & COO

Polar Semiconductor

17:20 – 17:30

Preparing for GaN Device Manufacturing at 300mm

GaN is one of the most important third generation semiconductor materials. Its wide bandgap makes it an excellent candidate for high power electronics – GaN high electron mobility transistors (HEMTs) have already become well established in Specialty Technology applications such as consumer fast charging and are gaining traction in automotive.

Today, the most advanced GaN device manufacturing is performed on 200mm wafers. But the recent advances in 300mm GaN on Silicon MOCVD is ushering the next phase of GaN adoption at the larger wafer size. Of increasing interest, is the fabrication of low voltage GaN power electronics targeted at data center power management applications, as the rapidly emerging world of generative AI accelerates datacenter investment.

Lam has been a leader in Specialty Technologies, in the development of enabling process capabilities for 200mm GaN on Si fabrication, for almost a decade. In this paper, we will review the current status of these capabilities and discuss the challenges and opportunities for transitioning GaN from 200mm to 300mm production.

Michelle Bourke

Managing Director Specialty Technologies and Strategic Marketing

Lam Research Corporation

17:35 – 17:45

Orbital Foundries for Next-Generation Semiconductors

The growing commercial space economy is lowering launch costs and enabling the construction of large-scale orbital infrastructure, paving the way for industrialization in space. The unique conditions of LEO – such as the absence of convection and the availability of high vacuum – can enable the growth of large defect-free crystals of Wide Bandgap semiconductors (SiC, AlN, Diamond), photonics, and quantum materials which cannot be produced at commercial scale on the ground today. This will unlock new levels of performance and efficiency in critical applications like electric vehicles, renewable energy, and advanced computing.

This talk will explore how commercial space stations, space logistics providers and large-scale orbital infrastructure are together unlocking the production of next-generation semiconductors in space. It will also highlight commercial case studies demonstrating the feasibility and potential of this transformative technology.

Divya Panchanathan, P.h.D.

Global Lead for In-Space Semiconductors Commercialization

Axiom Space

18:15 – 18:30

Drive to Levi’s Stadium

(18:15 Bus Departure at Plug and Play)

I.S.E.S. USA Power & M.S.W.S. USA Gala Dinner

18:30 – 19:30

I.S.I.G. Cocktail Reception

19:30 – 22:00

Gala Dinner & Awards Ceremony 

22:00 – 22:15

Drive to Santa Clara Marriott

(22:00 Bus Departure)

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