Salah Nasri
CEO & Co-Founder
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Salah Nasri is the CEO & Co-Founder of the International Semiconductor Executive Summits (ISES), a division of the International Semiconductor Industry Group Ltd. an influential organization within the semiconductor industry. With extensive experience in the sector, Nasri has played a pivotal role in fostering global collaboration among semiconductor leaders. Under his leadership, ISES has become a premier platform for industry executives to connect, share insights, and drive innovation across various regions including the United States, Europe, Asia, and the Middle East.
Salah Nasri has been instrumental in expanding the reach and impact of ISES, organizing significant events that bring together decision-makers from across the semiconductor ecosystem. These events provide opportunities for networking, collaboration, and the exchange of ideas crucial for advancing the industry in areas such as semiconductor manufacturing, MEMS, AI, automotive electronics, and more.
His leadership has not only enhanced the visibility of ISES globally but also strengthened partnerships with key industry players, ensuring that ISES remains at the forefront of semiconductor innovation and development. Salah Nasri has previously worked at Goldman Sachs’s, Credit Suisse and International Business Development Group. Salah Nasri graduated from Oxford University and Loughborough University in International Relations and Economics. In 2024, Salah Nasri became a Stanford University Alumni after completing the Stanford Executive Program.
Company Profile
Established in 2010, the International Semiconductor Industry Group (I.S.I.G.) is a prestigious and trusted association within the semiconductor industry, renowned for orchestrating major regional summits across the globe, ranging from the U.S, the Middle East & Asia via our division, the International Semiconductor Executive Summits (I.S.E.S.). Our summits, are fully endorsed by local governments and leading companies in all areas of the semiconductor supply chain.
Moreover, I.S.E.S. serves as the Premier platform for senior executives in technology, manufacturing, and R&D from diverse semiconductor companies, technology providers, and affiliated industries. Our events are instrumental helping to shed light onto key industry trends, drive innovation and influence key decisions to help shape, and advance the growth of the semiconductor sector. Join us today!
Denis Marcon, Ph.D.
General Manager
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Denis Marcon received a M.S. degree from the University of Padova in 2006. Subsequently, he received the degree of Doctor in Engineering (Ph. D.) from the Catholic University of Leuven and imec with the thesis entitled “Reliability study of power gallium nitride based transistors” in 2011. He is leading author or co-author of more than 50 journal papers or international conference contributions.
After his Ph.D. graduation, he has been leading projects aiming to develop GaN HEMTs for several applications (RF and power switching). Thereafter, he has joined the business development team of Imec where he was directly responsible for the partnerships with imec in the field of GaN power electronics as well as on dedicated development and manufacturing of Si-based devices, MEMS, sensors and micro-systems,
Today he is the General Manager of Innoscience Europe (subsidiary of Innoscience) and he is directly responsible for Innoscience’s GaN business in Europe.
Company Profile
Innoscience (HKEX:02577.HK) is the global leader in gallium nitride process innovation and power device manufacturing. Innoscience’s device design and performance set the worldwide standard for GaN, and the culture of continuous improvement will accelerate GaN performance and market adoption. The company’s gallium nitride products are used in multiple low, medium and high voltage applications, with GaN process nodes covering 15V to 1200V. Wafers, discrete devices, integrated power ICs, and modules provide customers with robust GaN solutions. With 800 patents granted or pending, Innoscience’s products are known for reliability, performance, and functionality within the fields of consumer electronics, automotive electronics, data centers, renewable energy and industrial power. Innoscience creates a bright future for GaN. Please visit www.innoscience.com for more information.
Innoscience’s Gallium Nitride products are used in multiple low, medium and high voltage applications, with GaN process nodes covering 15V to 1200V. Wafers, discrete devices, integrated power ICs, and modules provide customers with robust GaN solutions.
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