Denis Marcon, Ph.D.
General Manager and SVP
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Denis Marcon received a M.S. degree from the University of Padova in 2006. Subsequently, he received the degree of Doctor in Engineering (Ph. D.) from the Catholic University of Leuven and imec with the thesis entitled “Reliability study of power gallium nitride based transistors” in 2011. He is leading author or co-author of more than 50 journal papers or international conference contributions.
After his Ph.D. graduation, he has been leading projects aiming to develop GaN HEMTs for several applications (RF and power switching). Thereafter, he has joined the business development team of Imec where he was directly responsible for the partnerships with imec in the field of GaN power electronics as well as on dedicated development and manufacturing of Si-based devices, MEMS, sensors and micro-systems,
Today he is the General Manager of Innoscience Europe (subsidiary of Innoscience) and he is directly responsible for Innoscience’s GaN business in Europe.
Company Profile
Innoscience (HKEX:02577.HK) is the global leader in gallium nitride process innovation and power device manufacturing. Innoscience’s device design and performance set the worldwide standard for GaN, and the culture of continuous improvement will accelerate GaN performance and market adoption. The company’s gallium nitride products are used in multiple low, medium and high voltage applications, with GaN process nodes covering 15V to 1200V. Wafers, discrete devices, integrated power ICs, and modules provide customers with robust GaN solutions. With 800 patents granted or pending, Innoscience’s products are known for reliability, performance, and functionality within the fields of consumer electronics, automotive electronics, data centers, renewable energy and industrial power. Innoscience creates a bright future for GaN. Please visit www.innoscience.com for more information.
Innoscience’s Gallium Nitride products are used in multiple low, medium and high voltage applications, with GaN process nodes covering 15V to 1200V. Wafers, discrete devices, integrated power ICs, and modules provide customers with robust GaN solutions.
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