An accurate SPICE model is important for power electronics RD designers to pick up the right topologies according to applications and to optimize the layouts and choose the right components. Characteristics of SiC MOSFET are difficult to modeling using conventional Si-based physics models, and current commercially available models are mostly not accurate here or there, which reduced the usefulness of simulation and increased the complexity for achieving optimized designs. We’ve developed a SPICE model which can be applied to both planar and trench SiC MOSFET with very high accuracy, which will enable engineers to reach their target in an more efficient way.