09:20 – 09:40
ICeGaN: the Call of the GaN Revolution
The semiconductor industry is undergoing a transformational shift with the advent of Gallium Nitride (GaN), a material that offers superior power efficiency, thermal management, and frequency characteristics compared to traditional silicon. GaN’s increased power density and faster switching speeds have revolutionized critical sectors like telecommunications, renewable energy, electric vehicles, and data centers, aligning with the semiconductor megatrends of energy efficiency, miniaturization, and high-speed data transmission.
ICeGaN, the state-of-the-art technology for high voltage GaN HEMTs, enables ease of use and ruggedness thus helping to harvest on GaN expectations and achieve high efficient and high power density in power conversion.
Giorgia Longobardi, Ph.D.
Cambridge GaN Devices
Dr. Giorgia Longobardi, founder and CEO of Cambridge GaN Devices (CGD), is an accomplished engineer and business leader with nearly two decades of experience in power semiconductors and high-efficiency power electronics. As the inventor of several high-impact patents in GaN power devices, she combines deep technical expertise with strong commercial acumen—one of her greatest strengths.
Driven by curiosity and a passion for making a positive impact, Giorgia founded CGD to bring advanced, energy-efficient power electronics solutions to market. She now leads a diverse team of 60+ employees across Europe, Asia, the US, and Canada. Under her leadership, CGD has raised over $65 million in private and public investment and launched multiple GaN-based power device products into mass production. Her vision includes one day driving an electric vehicle powered by CGD technology and using ICeGaN to help make AI more sustainable by reducing its environmental footprint.
Giorgia serves on the Energy Management Committee of the Power Sources Manufacturers Association (PSMA) and the Advisory Board of the International Semiconductor Industry Group (I.S.I.G.).
Cambridge GaN Devices
Company Profile
A spin-out of the Cambridge University, Cambridge GaN Devices (CGD) is a fabless semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible.
Operating at a market worth exceeding $30 billion, CGD completed several funding rounds to develop and deliver to the market a wide range of products for consumer and industrial applications.
In autumn 2021, the company was named Tech Scaleup of the Year by Business Weekly in the category of green electronics and was awarded the UK Business Angels Association (UKBAA) deep tech Investment of the Year.
