ISES TV – ISES China 2024 – Day 2
Deep Silicon Etch – Enabling Key Solutions in Specialty Technologies 深度硅刻蚀 — 推动专业技术关键解决方案
Deep reactive ion etch (DRIE) technologies were developed more than 30 years ago to enable the fabrication of advanced surface micromachined micro-electromechanical systems (MEMS). Today the technology is not only critical to MEMS device manufacturing, but also the fabrication of advanced CMOS image sensors and power electronics. Furthermore, by enabling the high-performance etching of through silicon vias (TSVs), the technology is key to the advanced packaging solutions that are driving the architecture of the chips that support artificial intelligence (AI). In doing so, they are enabling the convergence of sensing and AI solutions to support the increasingly smart world in which we live.
At Lam we are committed to solving the most pressing challenges in Specialty Technologies and advanced packaging. In this short presentation, we will provide an overview of how Lam’s Rapidly Alternating Process (RAP) and Syndion®
product family are supporting the wide range of applications that are enabled by DRIE.
深反应离子刻蚀（DRIE）技术在30多年前被开发出来，以支持先进表面微机械系统（MEMS）的制造。如今，这项技术不仅对MEMS器件的制造至关重要，还用于先进CMOS图像传感器和功率电子器件的生产。此外，通过高性能刻蚀硅通孔（TSV），该技术对于推动支持人工智能（AI）的芯片架构的先进封装解决方案也至关重要。通过这些方式，它们促进了传感技术与人工智能解决方案的融合，支持我们生活的越来越智能的世界。
在Lam，我们致力于解决专业技术和先进封装领域中的最紧迫挑战。在这次简短的演示中，我们将概述Lam的快速交替工艺（RAP）和Syndion®产品系列如何支持DRIE技术所带来的广泛应用。
Dr. David Haynes
VP Strategic Marketing
Lam Research Corporation