• 09:30 – 10:00


HBM (High Bandwidth Memory) and Advanced Packaging Technology for AI Era

The semiconductor packaging industry is expected to grow in the coming years, driven by the increasing demands for semiconductor chips in various applications, such as smartphones, autonomous vehicles, 5/6G, high-performance computing, IoT devices, and artificial intelligence. Another trend is the increasing adoption of heterogeneous integration, where different types of chips, such as CPUs, GPUs, and memory, are integrated into a single package to improve performance and reduce power consumption.

To overcome the limitations of performance/power/density/bandwidth of cutting edge systems, and to create new business opportunity and new values, the importance of advanced packaging technologies is more increased. For the above reasons, the future of the semiconductor packaging industry looks promising, with the increasing demand for semiconductor chips in various applications and the emergence of new packaging technologies driving growth and innovation in the semiconductor industry.

Major semiconductor players accelerate the competition to lead semiconductor industry hegemony by the evolution of advanced packaging technology such as chiplets and 2.5D/3D heterogeneous integration.

SK hynix drive the innovation of packaging technology to meet the demand for higher bandwidth and capacity of memory devices requiring in the increased AI workload applications such as the advent of ChatGPT, an artificial intelligence chatbot. High bandwidth memory (HBM), offers the largest capacity and bandwidth and also comes with the most improved power efficiency enabled by an advanced packaging technology of novel 3D chip stacking. SK Hynix is taking the lead in the HBM market. It developed the world’s first HBM in cooperation with AMD in 2013 and continuously released second/third/fourth-generation HBMs (HBM2/HBM2E/HBM3), and has secured a market share of 60-70 percent. The chip-let technology based on heterogeneous integration will be another key driver for memory-centric systems various combination of logic and memory devices. By the evolution of advanced packaging technologies, SK Hynix will continuously lead the competitiveness of memory business and prepare the business innovation for beyond memory era.

Watch on ISES TV >
Kangwook Lee photo

Dr. Kangwook Lee

SVP and Head of PKG Development

SK Hynix

Dr. Lee has been one of critical leaders who are leading the era of 3D TSV stack memory such as HBM (High Bandwidth Memory) in semiconductor industry.

He has contributed broadly to, and led teams in, 3D integration/packaging R&D including core technology/product development/reliability study and mass production for HBM over 27 years.

Dr. Lee received the Ph.D. degree in machine intelligence and systems engineering from Tohoku University, Japan, in 2000. During his doctoral research at Tohoku University,

Dr. Lee proposed a new 3D-IC integration technology to achieve 3D devices with high performance and multi-functionality, leading this field in the world.

From 2001 to 2002, he was a Postdoctoral Researcher with the Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA.

He worked with Memory Division, Samsung Electronics Ltd., Korea, as a Principal Engineer from 2002 to 2008.

From 2008 to 2016, he worked with the New Industry Creation Hatchery Center (NICHe), Tohoku University, Japan, as a Professor.

From 2017 to 2018, he worked with R&D center, Amkor Technology Korea, as a VP.

He joined SK hynix 2018 and currently Senior VP, Head of PKG Development at SK Hynix, Korea.

Dr. Lee has led many interdisciplinary R&D programs on 3D integration, including integration of various materials and devices to achieve 3D devices/systems with high performance and new functionality,

3D-IC reliability research to investigate the impacts of 3D integration on the device performance and reliability, unique hybrid integration of nano-materials with Si, and product development of 3D stack DRAM

such as high-bandwidth memory (HBM). For over 27 years at universities and industries in Japan, US, and Korea, Dr. Lee has made exceptional technical contributions to and lasting impacts on 3D integration technology

and 3D product development in broad fields, such as material science, materials characterization/analysis, semiconductor device/process, electrical packaging, and Si micro-machining.

Dr. Lee has authored more than 230 scientific publications (peered journals, international conferences), co-edited 4 books, and given 43 tutorial/invited/keynote talks in international conferences including

IEEE IEDM, IEEE IRPS, VLSI Symposium, plus 23 US patent publications.

He has served as a frequent reviewer for a number of journals, including IEEE EDL, IEEE T- ED, IEEE CPMT, and technical program committees of international conferences, including IEEE ECTC, IEEE IRPS, IEEE EDTM, IEEE 3D SIC.

He is a Senior Member of IEEE.

View Full Profile