- 16:10 – 16:20
Intrinsic Reliability and Product Qualification Testing in GaN Power Semiconductors Do One the Other or Both?
The development of new technologies, such as GaN, have created the opportunity for more efficient and higher voltage/power performance in switching and power management circuits. GaN has high cutoff frequencies, low on-state resistance, and high breakdown voltages, enabling increased power handling densities for applications from 100 to >600 volts.
Assessment of material and processes used in device fabrication is a key aspect for fielding reliable product to the market. Process changes for cost and performance improvements must be vetted for reliability performance variance.
Reliability testing of switching power devices requires the balance of several competing challenges. The first is to understand the intrinsic reliability of the fabricated device. In order to quickly assess this, a “soft-switching” methodology may be useful.
Product or sub-system qualification, including extrinsic effects, is needed under application conditions. Assessment of product quality for application specific use is typically done using “hard-switching” tests to close approximation of the application.
The challenge for the device manufacturer is defining and implementing the reliability and qualification test regime that is both cost effective but industry applicable to the standards required. Where are we at in the journey to find a reliable and qualified part?
Mr. Shaw is President of Accel-RF Corporation and has over 40 years’ experience in RF/microwave test system development. He is an acknowledged industry leader in developing compound-semiconductor accelerated life test methodologies, and co-authored the “Gallium-Arsenide (GaAs) MMIC Reliability Assurance Guideline for Space Applications”, released by NASA-JPL in 1996 as the “guidebook” for space qualification of Gallium-Arsenide MMICs.
Mr. Shaw previously held management and technical positions at Lockheed Martin, Texas Instruments, and was Program Manager on several key projects for NASA-JSC. He has an MSEE from Southern Methodist University (SMU) and BSEE from Texas A&M University.
STAr Technologies, established in year 2000 and headquartered in Hsinchu Taiwan, with more than 800 employees servicing customers worldwide. We provide test technologies including software, instruments, automatic test equipment, burn-in systems, probe cards, and outsourcing test services to meet demanding challenges within the semiconductor industry. Our expertise extends across parametric electrical tests (E-test), wafer-level and package-level reliability (WLR & PLR), mixed signal tests, RF and power ICs burn-in, MEMS probe cards, load boards, test interfaces and sockets.
Accel-RF Instruments and STAr-Edge Technologies, located in California, provides world leading test equipment for performing high voltage-current, and wide temperature capabilities for long-duration reliability testing and burn-in qualification of compound semiconductors, such as Gallium-Nitride (GaN) and Silicon-Carbide (SiC). These test systems have enabled successful technology developments, product launches, and industry adoption of GaN transistors and MCMs into the aerospace, military, and commercial wireless, and power electronics markets, among others.View Full Profile