Today, power devices span multiple device architecture types, are produced on a variety of wafer sizes, and leverage multiple material sets including Silicon, Silicon Carbide and Gallium Nitride, to name a few currently mainstream materials. With increasing device power ranges, breakdown voltages, switching speeds and drive currents not only does the manufacture of this class of devices become more complex but the accuracy with which each processing step is conducted plays a vital role in ensuring the performance metrics are met, further ensuring overall device reliability and lifetime. This brief overview presentation will highlight a few of the challenges faced by device manufacturers during the production of silicon based super-junction MOSFETs, Silicon Carbide MOSFETs and finally Gallium Nitride HEMT (High Electron Mobility Transistors). In doing so, optical and infra-red critical dimension (O/IRCD) metrology and acoustic metrology technologies will be presented in the context of HVPs presented in the high-volume manufacture of these power devices.