EU PSES 2022 Speaker
Primit Parikh, Ph.D.
Primit co-leads Transphorm, a pioneer and leader in GaN Power Semiconductors. Having recently led Transphorm to a public company listing partnering with it’s phenomenal team, he is passionate about creating value from the intersection of business and technology. With over 20 years of semiconductor & entrepreneurial experience, his background includes capital raises, international markets & strategic partnerships, key customer relationships, products & manufacturing, IP, GaN/Semi technology and government contracting. Prior to Transphorm, Primit led GaN electronics at Nitres Inc. through its acquisition by Cree, where he served as the head of Advanced Technology at Cree SBTC in charge of GaN development and government business. Primit received his B.Tech. in EE from IIT, Mumbai and his Ph.D. in ECE from UCSB. He has more than 40 patents awarded and co-authored more than 75 publications and presentations. He is blessed to reside in the amazing Santa Barbara area with his wonderful family.
Commercialization of Easy to Use, Robust, High Performance GaN Power Devices – from 650V to 1200V, from 45W to 10kW+
GaN technology needs to serve the broadest market to be a viable solution in the long term. Transphorm’s robust normally-off GaN FET with its integrated Si-GaN architecture provides easy to interface, highest performance solutions with the best in class proven reliability with over 50 billion hours in the field: from low wattage markets such as adapters/chargers through Titaniumclass power supplies to Renewable Energy to Electric Vehicles solutions such as on-board chargers and DC/DC converters today and traction tomorrow. With its vertically integrated wafer manufacturing providing control, scale and rapid innovation backed by one of the strongest IP portfolio in GaN power, Transphorm provides the GaN industry’s first 650V and 900V AECQ101 product with 1200V in its roadmap. This presentation will detail how Transphorm’s GaN solutions enable our customers to serve the broadest and fastest growing power conversion markets– from low power to high power, from adapters to automotive.
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan.
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