With the current technological advancements in feature-rich electronic devices
demanding more power in less space, there is a persistent need to increase the
power densities of power modules. However, increasing power density often results in additional power loss within the module package, leading to increased thermal stress. Introducing silicon substrates into the power module market presents a significant opportunity for differentiation from the current state of
the art.

Silicon interposers are widely adopted for 2.5D and 3D packaging of dies processed in advanced technology nodes, supporting high-bandwidth signal routing. Lotus Microsystems has developed a proprietary process technology for creating silicon interposers specifically for power applications. This technology features thicker copper layers, high-density through-silicon vias (TSVs), and high- voltage insulation. Silicon’s superior integration capabilities and high thermal conductivity enable best-in-class power density with exceptional thermal performance.