Electroless Metallization of power semiconductor devices – challenges and benefits 功率半导体器件的化学镀金属化—挑战与机遇

ISES Docs:
In today’s world with its increasing demand in power semiconductor devices for electrification, e-mobility and enabling the flexible use of green energy it has become more and more imminent that it is not only necessary to involve new semiconductor materials (e.g. SiC, GaN) but also apply alternative manufacturing technologies to maintain the flexibility and reliability on the next generation of power semiconductor devices.
Electroless metallization processes from MKS are part of these alternative technologies for power semiconductor device manufacturing and have been established in the industry over past 10 years with their benefit of providing maskless metallization with higher throughput capability at a reduced Cost of Ownership compared to physical metallization techniques. Usually, electroless processes are being used as final finish on Cu or Al-based substrates but there is also the possibility of direct metallization of semiconductor material (e.g. Si, SiC, GaN) using the electroless processes and create a reliable ohmic contact

在当今世界随着电气化、电动汽车以及实现绿色能源灵活应用,对功率半导体器件的需求不断增加保持下一代功率半导体器件的灵活性和可靠性越来越紧迫不仅需要应用新的半导体材料(例如SiC、GaN),而且需要应用替代制造技术 

MKS公司的化学金属化工艺是用于功率半导体器件制造的这些替代技术的一部分并且已经在该行业中应用超过了十年自对准金属化的优点与物理金属化技术相比,具有更高的产能和更低的生产成本。通常,化学镀工艺被用于铜基或者铝基的最终处理另外还有一种可能性,就是在半导体材料(例如Si、SiC、GaN)表面直接用化学镀工艺沉积金属以形成一个可靠的欧姆接触 

Dr. Stefan Pieper

Global Application Manager

mks | Atotech

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