As the renewable energy market grows, more and more companies are trying to simplify the inverter design from three-level to two-level topology. With SiC MOSFETs with higher breakdown voltage up to 2200V, two-level inverters are made possible. These 2200V SiC MOSFETs employ the latest technologies with smaller pitch size and better packaging technology with better thermal performance, and can help increase the power density with lighter system weight.

随着可再生能源市场的增长，越来越多的公司试图将逆变器设计从三电平简化为两电平拓扑。借助高达2200V的SiC MOSFETs，这种两电平逆变器变得可行。这些2200V的SiC MOSFETs采用了最新的技术，具有更小的间距尺寸和更好的封装技术，提供了更优的热性能，能够提高功率密度并减轻系统重量。