The power electronics industry has historically used silicon devices and is now steadily moving to Silicon Carbide (SiC). GaN offer significant advantages from its inherent semiconductor properties, but has often been viewed as too hard to use for power electronics, with challenges in design, RFI, reliability and thermal issues. This paper describes the benefits of GaN and how these challenges can be addressed. It features the example of a high-frequency (>1MHz) GaN based pure-sinewave drive for industrial applications (7.5kW).