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Wide-Bandgap Power Semiconductors Provide New Power for Automotive Electrification 宽禁带功率半导体为汽车电气化提供新动力

Wide bandgap semiconductors are injecting strong impetus into the automotive electrification process with their unique performance advantages. Compared with Si-based semiconductors, WBG semiconductors have characteristics such as higher electron mobility, higher breakdown electric field strength, and lower on-resistance. This enables their applications in automobiles to significantly improve power conversion efficiency, reduce energy loss, and thereby extend the mileage range of electric vehicles.
In the power system of electric vehicles, the use of WBG semiconductors can optimize the performance of the motor drive controller, achieving more precise power control and a faster response speed. At the same time, in components such as on-board chargers and DC-DC converters, they help improve charging efficiency and shorten charging time.
In addition, WBG semiconductors can also enhance the reliability and stability of automotive electronic systems, reduce the heat dissipation requirements and volume of the system, and bring greater flexibility and innovation space for automotive design. It can be said that the continuous development and wide application of wide WBG semiconductors are accelerating the pace of automotive electrification and promoting the automotive industry to move in a more efficient, environmentally friendly and intelligent direction.
宽禁带功率半导体作为一项前沿技术,正以其独特的性能优势为汽车电气化进程注入强大动力。相较于传统半导体材料,宽禁带功率半导体具有更高的电子迁移率、更高的击穿电场强度和更低的导通电阻等特性。这使得它们在汽车中的应用能够显著提高电力转换效率,减少能量损耗,从而延长电动汽车的续航里程。在电动汽车的动力系统中,宽禁带功率半导体的使用能够优化电机驱动控制器的性能,实现更精确的电能控制和更快速的响应速度。同时,在车载充电器和直流-直流转换器等部件中,它们有助于提高充电效率,缩短充电时间。此外,宽禁带功率半导体还能够增强汽车电子系统的可靠性和稳定性,降低系统的散热需求和体积,为汽车设计带来更大的灵活性和创新空间。可以说,宽禁带功率半导体的不断发展和广泛应用,正在加速汽车电气化的步伐,推动汽车行业向更加高效、环保和智能的方向迈进。
Dr. Tim Yeh photo

Dr. Tim Yeh

Technical Director

Sanan Semiconductor