Dr. Avinash (Avi) Kashyap is the Vice President of the Power BU in the High Performance Computing, Analog and Power Solutions Group at Renesas Electronics. He is responsible for incubating and commercializing new technologies in the power area including wide bandgap, power modules and new generation IGBTs and Si FETs. Avi also leads revenue generation, business development and marketing for N. America and Europe.
Prior to his current role, he was Director of Silicon Carbide and Head of R&D for power discretes at Microchip Technology. Dr. Kashyap led engineering groups ranging from device design, process integration and test. He was responsible for creating product roadmaps and execution of critical silicon and wide bandgap programs including SiC FETs and diodes, Si low voltage FETs, rad-hard FETs and RF power switches.
Previously, Dr. Kashyap was leading several power device programs at the GE Global Research Center in Niskyuna, NY. He has been involved in the development of SiC technology since its infancy for 2 decades including pioneering work on compact modeling, SiC integrated circuits and radiation-hardened devices. He has authored more than 35 peer-reviewed publications and has over 20 patents granted or pending. Dr. Kashyap holds an MS & PhD in electrical engineering from the University of Arkansas, Fayetteville. He is a senior member of the IEEE and a member of the Arkansas Academy of Electrical Engineers.
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