Traditional blade sawing of power wafers (Si, SiC, GaN on different substrates) has issues: side wall cracks, passivation chipping, wafer crack, metal pealing, smearing of backside metallization along die side. Furthermore, it is characterized by high
consumable cost (blade wear, water consumption). With the clear demand for performance improvement there is a trend towards thinner wafers, thicker back side metallization and a switch towards different materials: SiC and GaN. Consequently,
the issues from traditional blade sawing for power wafers becoming even more prominent. A traditional solution applied to overcome these problems is reducing blade saw speed. This is not future proof as it leads to significantly higher equipment
and fab space cost. ASMPT ALSI has developed multi – beam laser dicing of power wafers which outperforms traditional blade sawing and cost of ownership. Several examples will be shown in the presentation.