Denis Marcon received a M.S. degree from the University of Padova in 2006. Subsequently, he received the degree of Doctor in Engineering (Ph. D.) from the Catholic University of Leuven and imec with the thesis entitled “Reliability study of power gallium nitride based transistors” in 2011. He is leading author or co-author of more than 50 journal papers or international conference contributions.
After his Ph.D. graduation, he has been leading projects aiming to develop GaN HEMTs for several applications (RF and power switching). Thereafter, he has joined the business development team of Imec where he was directly responsible for the partnerships with imec in the field of GaN power electronics as well as on dedicated development and manufacturing of Si-based devices, MEMS, sensors and micro-systems,
Today he is the General Manager of Innoscience Europe (subsidiary of Innoscience) and he is directly responsible for Innoscience’s GaN business in Europe.
Innoscience is an Integrated Device Manufacturer (IDM) founded in December 2015 with investment from CMBI, ARM, SK and other prestigious investors. With the development of new technologies, the electric power grid and power electronic systems across the world are undergoing a massive transformation. Our vision is to create an energy ecosystem with effective and low-cost Gallium-Nitride-on-Silicon (GaN-on-Si) power solutions. In November 2017, Innoscience first established a mass production 8-inch wafer line for GaN-on-Si devices in Zhuhai. In order to fulfill the rapidly growing power demands, Innoscience has inaugurated a new facility in the Suzhou in September 2020. As a cutting-edge GaN technology provider, Innoscience’s 1,400+ employees and over 300 R&D experts are dedicated to delivering high performance and high reliability GaN power devices that can be widely used in diverse applications including cloud computing, electric vehicles (EV) and automotive, portable devices, mobile phones, chargers and adapters. For more information, please visit www.innoscience.com.