Redefining Semiconductor Excellence: Innovation, Sustainability, and Global Transformation

Theme: Automotive Electronics Technology Innovation and Development

主题:汽车电子技术创新与发展 

07:30 – 08:50

Registration 签到注册

09:00 – 09:10

Welcome Speech

Shaojun Wei

Professor

Tsinghua University

09:10 – 09:25

Welcome and Product speech

Gerald Yin, Ph.D.

Chairman and CEO

AMEC

09:25 – 09:55

I.S.I.G. 15th Year Anniversary Panel Discussion I.S.I.G. 15周年特别企划

Topic: Bridging China and the Middle East: Growth Drivers for Chinese Enterprises in the Gulf Region
连接中国与中东:中国企业在海湾地区的增长动力 

Moderator

Salah Nasri

CEO and Co-Founder

International Semiconductor Industry Group (I.S.I.G.)

Panelist

Allan Zhou, Ph.D.

Senior Advisor

SiNan IC Innovation Center Lingang FTZ Shanghai

PART 1: Powering Mobility: Semiconductors Shaping the Future of Automotive

PART 1: 驱动出行:半导体重塑汽车未来 

Moderator:

I.S.I.G. China Regional President 

 

Tong Wu, Ph.D.

Leader of China Automotive Solution Team

onsemi

10:05 – 10:25

Keynote

Discussion on Chip Applications in the Era of Smart Electric Vehicles

智能电动汽车时代芯片应用探讨

Haoran Jiang

Vice Dean of Research Institute

iCAR Auto

10:25 – 11:25

Networking and Coffee Break 社交与茶歇

11:30 – 11:50

Keynote

Bosch advanced SiC chips and modules – Green engine to boost China EV development

博世先进碳化硅(SiC)芯片与模块:赋能中国电动汽车产业的绿色驱动力

Bosch, as worldwide leading automotive Tier 1, is also providing SiC trench technology to support the EV ramp-up in China.

Since 2021 Bosch successfully achieved serial launch of automotive level SiC MOSFETS at the Chinese leading OEM customers.

Based on the patented trench technology, so far Bosch delivered over 42 Mio. pieces high quality and high performance SiC chips to the automotive market.

Starting from 2025, Bosch mastered the transition to 8-inch manufacturing, providing scaled capacity to support Chinese EV customers’ demand expansion.

In a nutshell, Bosch Semiconductors provides a holistic power semiconductor portfolio to the customers, offering chips, discretes and power modules.

Bruno Schuster

Director Power Semiconductors – Regional business development Asia Pacific

Bosch

11:55 – 12:15

Keynote

The evolution of SiC MOSFET technology

碳化硅 MOSFET 技术的演进路径与突破

Silicon Carbide (SiC)-based devices are rapidly emerging as a transformative force in power electronics, with growing adoption across sectors such as automotive, photovoltaics (PV), energy storage, and uninterruptible power supplies (UPS). The paradigm shift from traditional silicon-based devices (IGBTs and MOSFETs) to SiC MOSFETs is largely driven by the superior figure-of-merit (FOM) of SiC materials, enabling higher efficiency, faster switching, and better thermal performance.
For decades, planar MOSFETs have been the mainstream choice for discrete SiC power devices due to their simplified structure, mature fabrication processes and proven reliability. As SiC process technology has advanced, the specific on-resistance (Ron,sp = Ron × A) has been continuously reduced by shrinking the cell pitch, thereby increasing the number of effective cells within a fixed die area. Today, commercial SiC MOSFETs feature cell pitches below 4.0 µm, approaching the scaling limits of planar MOS structures due to: intrinsic JFET resistance and difficulty of feature size scaling. The industry now faces a critical decision point: Continue pushing the limits of planar MOSFETs, or transition to trench MOSFET architectures. While trench MOSFETs introduce challenges such as: Elevated electric fields at the trench bottom, raising reliability concerns and more complex process integration. They also offer compelling advantages: higher channel mobility and reduced JFET resistance. These benefits make trench MOSFETs an attractive successor from the perspective of planar MOSFET manufacturers seeking performance gains.

In this presentation, we will review the evolution of SiC MOSFET technology, highlighting:

• Technological advancements in planar MOSFETs
• Emerging perspectives on trench MOSFET architectures
• Insights from ongoing R&D activities at Hunan Sanan Semiconductor, aimed at overcoming scaling barriers and unlocking the next generation of high-performance SiC power devices.

Tzu Kun Ku, Ph.D.

VP of Process Technology Development, CPO

Hunan Sanan Semiconductor Co., Ltd.

12:15 – 13:20

Buffet Lunch 自助午餐

13:30 – 14:15

Panel Discussion 圆桌讨论

Topic: Global Landscape of Automotive Chip Industry and Compliance Practices for Reliability Testing
车规级芯片产业的全球格局与可靠性测试合规实践

Moderator

Joseph Chou

General Manager

POMME TECHNOLOGIES., LTD

Panelist

Jinwei Liu

Senior Reliability Expert

Geely Auto Group

Panelist

Yung Shun Liu

Senior Chief Engineer

Chery Automobile

Panelist

Taizhi Zhang, Ph.D.

Senior Engineer

Inovance Automotive

Panelist

Tzu Kun Ku, Ph.D.
VP of Process Technology Development, CPO

Hunan Sanan Semiconductor Co., Ltd.

Panelist

Marcus Kneifel, Ph.D.

Sr. Vice President, Systems Engineering

onsemi

Panelist

Wei Wenyuan

C-ASAM Secretary General

CATARC Shanghai

PART 2: Driving Innovation and Ensuring Competitiveness in SiC & GaN

PART 2: 驱动创新,筑牢碳化硅与氮化镓竞争力

 

14:15 – 14:35

Keynote

Driving Innovation and Ensuring Competitiveness in GaN & SiC

以创新赋能 GaN SiC 发展,筑牢产业竞争优势

Francesco Muggeri

Vice President, Power Discrete and Analog Products China

STMicroelectronics

14:40 – 15:00

Keynote

Powering the Future of EVs by Driving Power Density

以功率密度提升,驱动电动汽车的未来发展 

As the world moves towards global electrification, innovation on multiple fronts is required to create highly efficient EV systems. Innovations on control systems, modules for power stages, semiconductors, new materials for thermal management and operating systems at higher frequencies allow for EV systems to become more efficient.
In this talk, we will discuss new semiconductors that can switch high voltages at higher frequencies. The advantages of switching at higher frequencies translates to higher efficiency of the EV motor and inverter leading to lower costs for the EV. We will also discuss thermal management options for the power stages so we can push the existing semiconductors to deliver more power increasing the power density of the system.

Dinesh Ramanathan, Ph.D.

Senior Vice President, Corporate Strategy

onsemi

15:05 – 15:25

Technological development and application, challenges and future trends of SiC power devices

碳化硅(SiC)功率器件的技术发展、应用场景、挑战与未来趋势

This article introduces the current development status and applications of SiC devices, especially in popular fields, the various problems faced by SiC devices, especially the reliability issue of SiC devices. Finally, the author provides the future and prospects of SiC devices, as well as the progress made by Yangjie Technology in SiC devices.

Jun Shi, Ph.D.

Power Module Division Deputy General Manager

Yangzhou Yangjie Electronic Technology Co., Ltd

15:30 – 16:30

Networking and Coffee Break 社交及茶歇

16:30 – 16:50

Power Semiconductors – The silent Heroes of the future power grid

功率半导体 —— 未来电网的隐形英雄

Power semiconductors are the unsung enablers of the energy transition. As the backbone of efficient energy conversion and control, they ensure stability, scalability, and sustainability in tomorrow’s power grids. From integrating renewables to managing smart loads and enabling bidirectional energy flow, these components silently drive innovation and resilience in modern energy systems—making them indispensable to a carbon-neutral future.

Tobias Keller

Vice President, Head of global Product Mgt., Portfolio & Marketing

Hitachi Energy Ltd.

16:50 – 17:10

Renesas Automotive X-in-1 System Solution and Technology Driven by GaN

瑞萨电子汽车多合一(X-in-1)系统解决方案:以氮化镓(GaN)技术为驱动

The “X-in-1” approach in Electric Vehicles (EVs) refers to the integration of multiple essential components of the vehicle into a single, unified system or module. Renesas has created a reference design with all Renesas portfolios to show the system value of electronics integration. Diverse portfolios include MCU, PMIC, HV GaN, LV MOSFET, GDU, DC/DC converters, which can enable the entire system from a solution perspective, ensuring high efficiency and reliability. HV GaN adoption and new technology trend with bi-directional GaN is also under implementation in the system solution to show the benefit from system solution view.

Johnny Guo

Director, Solutions

Renesas Electronics

17:15 – 17:35

Driving the Future with GaN: From Myth to Reality

以氮化镓驱动未来:从愿景到现实 

Exploring GaN and separating fact from fiction, this presentation reveals its true role in the automotive sector and shows how forward-thinking innovators can apply it effectively to gain a competitive advantage.

Henryk Dabrowski

SVP of Global Sales

Cambridge GaN Devices

17:40 – 17:50

Preparing for GaN Device Manufacturing at 300mm

GaN is one of the most important third generation semiconductor materials. Its wide bandgap makes it an excellent candidate for high power electronics – GaN high electron mobility transistors (HEMTs) have already become well established in Specialty Technology applications such as consumer fast charging and are gaining traction in automotive.

Today, the most advanced GaN device manufacturing is performed on 200mm wafers. But the recent advances in 300mm GaN on Silicon MOCVD is ushering the next phase of GaN adoption at the larger wafer size. Of increasing interest, is the fabrication of low voltage GaN power electronics targeted at data center power management applications, as the rapidly emerging world of generative AI accelerates datacenter investment.

Lam has been a leader in Specialty Technologies, in the development of enabling process capabilities for 200mm GaN on Si fabrication, for almost a decade. In this presentation, we will review the current status of these capabilities and discuss the challenges and opportunities for transitioning GaN from 200mm to 300mm production.

Elpin Goh

Sr. Director, Technical Marketing and Business Development, Specialty Technologies

Lam Research Corporation

PART 3: Market Research & Outlook

PART 3: 市场研究与展望 

17:50 – 18:10

Innovations in Power Electronics for xEV and Data Center Applications: The Evolving Roles of Silicon, SiC, and GaN

xEV 与数据中心应用中的电力电子创新:硅、碳化硅与氮化镓的角色演进 

The global push for electrification and digitalization is accelerating innovation in power electronics, especially in two critical sectors: electric and hybrid electric vehicles (xEVs) and data centers. This presentation explores the latest technological trends and market dynamics shaping the future of power devices in these applications, with a special focus on the evolving roles of Silicon, Silicon Carbide (SiC), and Gallium Nitride (GaN) semiconductor technologies.

In the xEV domain, sustainability goals and electrification trends are driving long-term growth, with the market expected to reach 64.3 million vehicles by 2030. The corresponding power device market is projected to reach nearly $14.9 billion, fueled by the trend toward full vehicle electrification and the increased adoption of Wide Bandgap (WBG) technologies and high-voltage architectures such as 800V and the emerging 1,000V systems. These platforms are being accelerated by advances in SiC technology, reduced substrate costs, and expanded high-power charging infrastructure. SiC’s superior efficiency, thermal performance, and compactness are key enablers of higher power density, longer driving range, and smaller system footprints—particularly in traction inverters for BEVs. Chinese OEMs are leading this shift through the aggressive integration of SiC. PHEVs, currently still almost exclusively based on IGBTs, are also beginning to adopt SiC in their main inverters as battery capacities increase. Silicon devices remain the technology of choice primarily for hybrid electric vehicles and low-power electric vehicles. GaN remains a promising contender in xEVs, with potential deployment in onboard chargers and DC-DC converters—and, in the longer term, in main inverters—though its adoption is hindered by cost, supply chain, and technology challenges.In data centers, the surge in AI workloads has triggered an urgent need for higher-efficiency power conversion. Power Supply Units (PSUs) are central to this transformation, with the market expected to grow at a 15.5% CAGR, reaching $14.1 billion by 2030. The introduction of the 80 PLUS Ruby certification sets a new efficiency benchmark, demanding up to 96.5% efficiency at 50% load. To meet such stringent targets and rising power densities—now exceeding 100 W/in³—PSU designers are rapidly adopting WBG semiconductors. SiC and GaN together are expected to account for 24% of PSU power device shipments by 2030.

Hybrid designs combining Si, SiC, and GaN in optimized topologies are emerging as the new standard. Infineon’s new 400V SiC class targets three-level PSU topologies to further push efficiency boundaries. These innovations are key to addressing the dual challenges of energy efficiency and power scalability in future AI-driven data centers.

Gary Huang

Corporate VP, Asia

Yole Group

18:10 – 18:20

Closing Speech

Tong Wu, Ph.D.

Leader of China Automotive Solution Team

onsemi

18:20 – 19:15

Networking and Drink Reception 社交及酒会

19:15 – 20:30

Gala Dinner and Award Ceremony 颁奖晚宴

The end of Day 1

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