Redefining Semiconductor Excellence: Innovation, Sustainability, and Global Transformation

Theme: Automotive Electronics Technology Innovation and Development

主题:汽车电子技术创新与发展 

07:30 – 08:50

Registration 签到注册

09:00 – 09:05

Welcome Speech

Prof. Shaojun Wei

Professor

IME, Tsinghua University

09:05 – 09:20

Welcome and Product speech

Gerald Yin, Ph.D.

Chairman and CEO

AMEC

09:20 – 10:05

I.S.I.G. 15th Year Anniversary Panel Discussion I.S.I.G. 15周年特别企划

Topic: Chinese Enterprises Going to Middle East 中国企业出海中东战略 

Moderator

Salah Nasri

CEO and Co-Founder

International Semiconductor Industry Group (I.S.I.G.)

PART 1: Powering Mobility: Semiconductors Shaping the Future of Automotive

PART 1: 驱动出行:半导体重塑汽车未来 

Moderator:

I.S.I.G. China Regional President 

 

Tong Wu, Ph.D.

Leader of Auto Marketing and Technical Team, Principal Expert, SiC Applications

onsemi

10:15 – 10:35

Reserved slot for China Automotive (拟理想汽车)

10:35 – 11:35

Networking and Coffee Break 社交与茶歇

11:35 – 11:55

Bosch advanced SiC chips and modules – Green engine to boost China EV development

Bosch, as worldwide leading automotive Tier 1, is also providing advanced SiC trench technology to support the EV ramp-up in China. Since 2021 Bosch successfully achieved serial launch of automotive level SiC MOSFETS at the Chinese leading OEM customers. Based on the patented advanced trench technology, so far Bosch delivered over 42 Mio. pieces high quality and high performance SiC chips to the automotive market. Starting from 2025, Bosch mastered the transition to 8-inch manufacturing, providing scaled capacity to support Chinese EV customers’ demand expansion. In a nutshell, Bosch Semiconductors provides a holistic power semiconductor portfolio to the customers, offering chips, discretes and power modules.

Bruno Schuster

Director Power Semiconductors – Regional business development Asia Pacific

Bosch

12:00 – 12:20

TK.KU, Ph.D.

VP of Process Technology Development, CPO

Sanan Semiconductor

12:20 – 13:30

Buffet Lunch 自助午餐

13:30 – 14:15

Panel Discussion 圆桌讨论

Topic: Global Landscape and Compliance Practices in the Automotive Chip Industry
车规级芯片产业的全球格局与合规实践 

Moderator

Joseph Chou

General Manager

POMME TECHNOLOGIES., LTD

Panelist

Wei Wenyuan

Secretary General

CATARC

Panelist

Liu Yongshun

Senior Chief Engineer of Chips

Chery

Panelist

Tong Wu, Ph.D.
Leader of Auto Marketing and Technical Team, Principal Expert, SiC Applications

onsemi

Panelist

TK.KU, Ph.D.

VP of Process Technology Development, CPO

Sanan Semiconductor

PART 2: Driving Innovation and Ensuring Competitiveness in GaN & SiC

PART 2: 驱动创新,筑牢碳化硅与氮化镓竞争力 

 

14:15 – 14:35

Francesco Muggeri

VP Marketing & Applications, Power Discrete & Analog, China

STMicroelectronics

14:40 – 15:00

Dinesh Ramanathan, Ph.D.

Senior Vice President, Corporate Strategy

onsemi

15:05 – 15:25

Technological development and application, challenges and future trends of SiC power devices

This article introduces the current development status and applications of SiC devices, especially in popular fields, the various problems faced by SiC devices, especially the reliability issue of SiC devices. Finally, the author provides the future and prospects of SiC devices, as well as the progress made by Yangjie Technology in SiC devices.

Jun Shi, Ph.D.

Power Module Division Deputy General Manager

Yangzhou Yangjie Electronic Technology Co., Ltd

15:30 – 16:30

Networking and Coffee Break 社交及茶歇

16:30 – 16:50

Power Semiconductors – The silent Heroes of the future power grid

Power semiconductors are the unsung enablers of the energy transition. As the backbone of efficient energy conversion and control, they ensure stability, scalability, and sustainability in tomorrow’s power grids. From integrating renewables to managing smart loads and enabling bidirectional energy flow, these components silently drive innovation and resilience in modern energy systems—making them indispensable to a carbon-neutral future.

Tobias Keller

Vice President, Head of global Product Mgt., Portfolio & Marketing

Hitachi Energy Ltd.

16:50 – 17:10

Johnny Guo

Director Solutions – User Experience

Renesas Electronics

17:15 – 17:25

Lam Research Corporation

17:30 – 17:50

Reserved speak slot for Epiworld 厦门瀚天天成 

PART 3: Market Research & Outlook

17:50 – 18:10

Innovations in Power Electronics for xEV and Data Center Applications: The Evolving Roles of Silicon, SiC, and GaN

xEV 与数据中心应用中的电力电子创新:硅、碳化硅与氮化镓的角色演进 

The global push for electrification and digitalization is accelerating innovation in power electronics, especially in two critical sectors: electric and hybrid electric vehicles (xEVs) and data centers. This presentation explores the latest technological trends and market dynamics shaping the future of power devices in these applications, with a special focus on the evolving roles of Silicon, Silicon Carbide (SiC), and Gallium Nitride (GaN) semiconductor technologies.

In the xEV domain, sustainability goals and electrification trends are driving long-term growth, with the market expected to reach 64.3 million vehicles by 2030. The corresponding power device market is projected to reach nearly $14.9 billion, fueled by the trend toward full vehicle electrification and the increased adoption of Wide Bandgap (WBG) technologies and high-voltage architectures such as 800V and the emerging 1,000V systems. These platforms are being accelerated by advances in SiC technology, reduced substrate costs, and expanded high-power charging infrastructure. SiC’s superior efficiency, thermal performance, and compactness are key enablers of higher power density, longer driving range, and smaller system footprints—particularly in traction inverters for BEVs. Chinese OEMs are leading this shift through the aggressive integration of SiC. PHEVs, currently still almost exclusively based on IGBTs, are also beginning to adopt SiC in their main inverters as battery capacities increase. Silicon devices remain the technology of choice primarily for hybrid electric vehicles and low-power electric vehicles. GaN remains a promising contender in xEVs, with potential deployment in onboard chargers and DC-DC converters—and, in the longer term, in main inverters—though its adoption is hindered by cost, supply chain, and technology challenges.In data centers, the surge in AI workloads has triggered an urgent need for higher-efficiency power conversion. Power Supply Units (PSUs) are central to this transformation, with the market expected to grow at a 15.5% CAGR, reaching $14.1 billion by 2030. The introduction of the 80 PLUS Ruby certification sets a new efficiency benchmark, demanding up to 96.5% efficiency at 50% load. To meet such stringent targets and rising power densities—now exceeding 100 W/in³—PSU designers are rapidly adopting WBG semiconductors. SiC and GaN together are expected to account for 24% of PSU power device shipments by 2030.

Hybrid designs combining Si, SiC, and GaN in optimized topologies are emerging as the new standard. Infineon’s new 400V SiC class targets three-level PSU topologies to further push efficiency boundaries. These innovations are key to addressing the dual challenges of energy efficiency and power scalability in future AI-driven data centers.

Gary Huang

Corporate VP, Asia

Yole Group

18:10 – 18:20

Closing Speech

Tong Wu, Ph.D.

Leader of Auto Marketing and Technical Team, Principal Expert, SiC Applications

onsemi

18:20 – 19:15

Networking and Drink Reception 社交及酒会

19:15 – 20:30

Gala Dinner and Award Ceremony 颁奖晚宴

The end of Day 1

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