Driving the Future: Breakthroughs in Advanced Packaging, Glass Substrates, and Automotive Innovations

08:00 – 08:35

Registration

Advancing Substrate Technologies: Glass & Panel Substrates in Next-Gen Semiconductor and Packaging Solutions

08:40 – 09:00

Keynote

Advanced Packaging Technologies for the AI era

Advanced packaging is enabling unprecedented levels of integration, enabling dense interconnection of logic, memory and optical chiplets, to create a system in a package. In AI & data centric applications, the amount of silicon content in a single package is increasing dramatically every generation. To meet future scaling, high speed signaling and power delivery needs, the package substrate must also evolve significantly. In this talk, we will cover some of the recent advances in the EMIB package platform including multiple scaling vectors such as die to die interconnection pitch, package form factor and the introduction of a bridge with TSV to enable denser and more efficient integration on package. Further, we will also cover the Intel’s latest breakthrough’s in glass core substrates which have superior mechanical, physical and optical properties and can drive dramatic improvements in chiplet integration on a substrate.

Rahul Manepalli, Ph.D.

Intel Fellow & Vice President : Advanced Packaging Technology Development

Intel Corporation

09:00 – 09:20

Keynote

Brightening the Future with Advanced Semiconductor Packaging Technologies

At the forefront of semiconductor technology development, the evolution of back-end processes is essential. In particular, “advanced semiconductor packaging technology” is responding to the demand for high performance and multi-functionality of semiconductors and promoting high integration. In this presentation, we will introduce the latest technological trends.

Yasushi Araki

Corporate Officer

SHINKO

09:20 – 09:40

Revisiting the Necessity and Challenges of Glass Substrates in 3DIC Advanced Packaging

In 3DIC and HPC packaging, achieving both high-precision assembly and reliability demands a careful balance of material properties. Glass offers low CTE, high flatness, and low dielectric loss, yet faces trade-offs such as TGV reliability and stress management. This study argues that, without clearly defining the necessity of glass, application development lacks momentum. By analyzing these inherent contradictions, we discuss how to interpret and manage the trade-offs between material properties and system reliability, providing insights toward the future direction of glass utilization in advanced packaging.

Kinya Ichikawa

Technical Director

3DIC Research Lab

09:45 – 10:45

Networking & Business Meeting 5+ 6

10:50 – 11:00

Tailoring through glass via (TGV) dimensions for glass-core panel substrates

Glass-core substrates are redefining advanced packaging by overcoming warpage and thermal management limits of organic materials. Central to this technology are through-glass vias (TGVs), whose precision and density define performance. We present an innovative alkaline etching technology combined with laser modification, enabling unprecedented control of via geometry with taper angles below 1°. Compared to conventional acidic etching, our process delivers higher selectivity, at advanced throughput, and compatibility with industrial considered glass types. This breakthrough enables the scalable production of ultra-high-density TGV substrates—paving the way for next-generation packaging demands.

Holger H. Kuehnlein, P.h.D.

SVP Technology

RENA Technologies

11:00 – 11:10

Advancing Packaging Technology: Exploring Through Glass Vias for Glass Core Integration as an Alternative to Si Interposer

In contemporary electronic packaging, the pursuit of miniaturization, enhanced performance, and reliability remains a fundamental driving force. This abstract introduces a novel approach in advanced packaging through the utilization of Through Glass Vias (TGVs) for Glass Core Integration, as a viable alternative to Conventional Silicon (Si) Interposer technology. The presentation encapsulates the background, motivations, technical aspects, and results of our evaluation work in this innovative packaging paradigm.
The background of this research is grounded in the growing demand for smaller form factors, increased functionality, and improved thermal management in electronic devices. Traditional Si interposer technology, while effective, presents limitations in terms of scalability, thermal conductivity, and electrical performance. Thus, the exploration of alternative materials and methodologies is imperative for the next generation of packaging solutions.
Motivated by the exceptional properties of glass, including its thermal stability, electrical insulation, and compatibility with existing manufacturing processes, this study delves into the feasibility of utilizing glass as both a carrier and core material in advanced packaging. Through Glass Vias (TGVs) emerge as a key enabler, facilitating vertical interconnects within the glass substrate.
Key considerations such as through-hole requirements, aspect ratios, seed layer deposition, and adhesion to glass are meticulously addressed to ensure the integrity and reliability of the packaging structure. Innovative process technologies are developed to fabricate TGVs with precise dimensions, high aspect ratios, and robust electrical properties.
The hardware requirements for implementing TGV-based packaging are evaluated, encompassing equipment for laser drilling, seed layer deposition, plating, and planarization processes. Cost considerations are also examined to ascertain the economic viability of this approach compared to conventional methodologies.
Results from our evaluation work demonstrate promising advancements in TGV-based packaging, including enhanced electrical performance, superior thermal dissipation, and significant miniaturization potential. Through detailed analysis and experimentation, this presentation illuminates the transformative capabilities of Through Glass Vias for Glass Core Integration, heralding a new era in advanced packaging technology.

Herbert Oetzlinger

VP and Head of Panel Product Line

Lam Research Corporation

11:10 – 11:20

Orbital Manufacturing of Next-Generation Semiconductors

The growing commercial space economy is lowering launch costs and enabling the construction of large-scale orbital infrastructure, paving the way for industrialization in space. The unique conditions of LEO – such as the absence of convection and the availability of high vacuum – can enable the growth of large defect-free crystals of WBG semiconductors, photonics, and quantum materials which cannot be produced at commercial scale on the ground today. This will unlock new levels of performance and efficiency in critical applications like electric vehicles, renewable energy, and advanced computing.

This talk will explore how commercial space stations, space logistics providers and large-scale orbital infrastructure are together unlocking the production of next-generation semiconductors in space. It will also highlight commercial case studies demonstrating the feasibility and potential of this transformative technology.

Koichi Wakata

Astronaut and Chief Technology Officer

Axiom Space

11:25 – 12:10

Panel Discussion: How Far Can Package and Substrate Scaling Go Beyond 2028?

Moderator

Kinya Ichikawa

Technical Director

3DIC Research Lab

Panelist

Deepak Kulkarni, Ph.D.

Senior Fellow Advanced Packaging

AMD

Panelist

Rahul Manepalli, Ph.D.

Intel Fellow & Vice President : Advanced Packaging Technology Development

Intel Corporation

Panelist

Cleon Chan

VP, Business Development (Panel Solutions)

Onto Innovation

Panelist

Hidenori Abe
Executive director, Electronics Business Headquarters and CTO for semiconductor materials

Resonac Corporation

Panelist

Yasushi Araki

Corporate Officer

SHINKO

12:15 – 13:30

LUNCH

Shaping the Future of Power Semiconductor and Automotive with Cutting-Edge Innovations

13:35 – 13:55

Keynote

Power Challenges for Next-Generation Vehicles and Murata’s Pursuit of Technological Innovation

Vehicle architecture is undergoing rapid transformation driven by autonomous driving, IoT integration, AI implementation, and the shift toward Software-Defined Vehicles (SDVs). The overall power consumption of vehicles is increasing due to the rise in electronic control units and the adoption of high-performance processors. While low-power design, wide bandgap semiconductors, and thermal management technologies are being developed, efforts are also underway to develop in-motion charging and transition to 48V architectures.

Requirements for electronic devices in new architectures and Murata’s initiatives will be reported.

Hiroshi Iwatsubo

CTO and Executive Deputy President

Murata Manufacturing

13:55 – 14:15

Exploring the Present and Future of AMHS in Semiconductor Fabs

Automated transportation in semiconductor fabs began with front-end processes in 1980s. It has grown in scale and expanded to advanced back-end operations. Recently we are also receiving requests to handle materials and tools. Beyond wafer transportation, by “Full Fab Automation”, where we fully automate the movement of goods throughout the entire factory, we aim to contribute to the ever-growing semiconductor industry.

Daisuke Murata

President and CEO

Murata Machinery

14:15 – 14:35

Advancing Mobility and Sustainability: DENSO’s Vision for Next-Generation Power Devices and Integrated Power Electronics

Achieving zero accidents and zero emissions demands breakthrough innovation in automotive power electronics. DENSO, drawing on its Tier1 expertise and the advanced semiconductor R&D of MIRISE Technologies, is driving progress in wide bandgap semiconductors, advanced packaging solutions, and next-generation control technologies through integrated system development. This approach enables higher efficiency and reliability in electrified vehicles and accelerates the transition to sustainable mobility. Through global collaboration and next-generation solutions, DENSO is committed to shaping a future where mobility harmonizes with environmental stewardship and societal wellbeing.

Kazuoki Matsugatani, P.h.D.

Senior Director, R&D Center

DENSO CORPORATION

14:35 – 14:45

Smart Materials, Smarter Systems: Enabling 3D Integration with Engineered Substrates

The semiconductor industry is entering a decisive phase where traditional 2D scaling is no longer sufficient to sustain performance, energy efficiency, and cost targets. The path forward lies in 3D integration, where materials innovation and substrate engineering play a pivotal role. At Soitec, our mission is to provide the foundational technologies that make this transition possible.

Engineered substrates represent a strategic enabler for the next era of computing. By tailoring the substrate to the device, we unlock unique advantages: superior electrical isolation, reduced power consumption, enhanced thermal performance, and the ability to integrate diverse materials seamlessly. This flexibility is essential to meet the diverse requirements of high-performance computing, mobile communications, automotive intelligence, and edge AI.

At the heart of this innovation is Soitec’s Smart Cut™ layer transfer technology. This breakthrough makes it possible to detach and transfer ultra-thin crystalline layers with atomic precision, enabling stacking and heterogeneous integration at a scale and quality unmatched in the industry. With Smart Cut™, we can bring logic, memory, and interconnect layers closer together, shortening critical paths, reducing latency, and dramatically increasing bandwidth density.

What this means for the industry is profound: engineered substrates and precision layer transfer redefine the scaling roadmap. They extend Moore’s Law where transistor scaling alone cannot, and accelerate “More-than-Moore” solutions by enabling chiplet architectures, advanced system-in-package, and vertically integrated designs.

As we look ahead, Soitec is committed to driving collaboration across the ecosystem—foundries, device makers, and system integrators—to unlock the full potential of 3D integration. By aligning materials innovation with system-level needs, we ensure that the semiconductor industry continues to deliver the performance and efficiency breakthroughs that power our digital society.

Christophe Maleville, Ph.D.

Chief Technology Officer and Senior Executive Vice President of Soitec’s Innovation

Soitec

14:50 – 15:30

Networking & Business Meeting 7

15:35 – 15:55

Renesas Powering the Future of Robotics

The robotics industry is undergoing a transformative shift and two digits high CAGR%, driven by advancements in artificial intelligence, autonomous systems, and energy-efficient design. As robots become more intelligent, mobile, and collaborative, with several tens of motor joints spanning power from a few watts to above kW, the demand for robust and scalable power management solutions intensifies, including advanced safety features.

Renesas addresses these evolving needs with a comprehensive portfolio that includes high-performance MCU and Power Management ICs (PMICs), Gallium Nitride (GaN) technologies, at High Voltage for AC driven Cobots for Industrial Automation, and Low Voltage together with cutting-edgs Mosfets for Battery driven Humanoids and Drones, together with advanced Battery Management Systems (BMS).

Gaurang Shah

Vice President, Division

Renesas Electronics Corporation

Workforce Development Challenges and Opportunities

15:55 – 16:35

Panel Discussion: Workforce of the Future: Building, Training, and Inspiring Semiconductor Talent for Long-Term Competitiveness for Japan

Moderator

Salah Nasri

CEO and Co-Founder

International Semiconductor Industry Group (ISIG)

Panelist

Nahomi Aoto, Ph.D.

Professor by Special Designation

Hiroshima University

Panelist

Tetsuo Endoh, Ph.D.

Director/Professor

Tohoku University Center for Innovative Integrated Electronic Systems

Panelist

Hitoshi Wakabayashi

Professor

Institute of Science Tokyo

16:35 – 16:40

Closing Remark

Tadahiro Suhara

CEO

TSSC

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