Gallium nitride (GaN) devices have emerged as a superior alternative to mature technologies like Si, boasting higher efficiency, power density, and cost-effectiveness for various applications. Among the GaN landscape, there are three main technologies: Depletion mode (D-mode), Enhancement mode (E-mode), and vertical GaN, although the latest one not yet broadly commercially available.

D-mode devices function as normally-on switches, therefore used in combination with cascode or direct drive configurations. D-mode cascode devices offer higher gate threshold voltage, lower 3rd quadrant losses or lower gate leakage current. E-mode HEMTs, based on a p-GaN layer on the gate (normally-off), offer advantages like enhanced efficiency at lower voltages (<300V), simpler manufacturing, and improved slew rate control.

This presentation will delve into the strengths and weaknesses of each technology, while also examining their respective target segments, applications, and market sizes.